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| 型号： | FDMS2672 |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 2/7页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 200V 3.7A POWER56 |
| 产品培训模块： | High Voltage Switches for Power Processing |
| 产品变化通告： | Design/Process Change 22/Aug/2007 |
| 产品目录绘图： | Power56 Single |
| 标准包装： | 1 |
| 系列： | UltraFET™ |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 200V |
| 电流 - 连续漏极(Id) @ 25° C： | 3.7A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 77 毫欧 @ 3.7A，10V |
| Id 时的 Vgs(th)（最大）： | 4V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 42nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 2315pF @ 100V |
| 功率 - 最大： | 2.5W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-MLP，Power56 |
| 供应商设备封装： | Power56 |
| 包装： | 标准包装 |
| 产品目录页面： | 1609 (CN2011-ZH PDF) |
| 其它名称： | FDMS2672DKR |
Electrical Characteristics T J = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BV DSS
' BV DS S
' T J
I DSS
I GSS
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
I D = 250 P A, V GS = 0V
I D = 250 P A, referenced to 25°C
V DS = 160V
V GS = ±20V, V DS = 0V
200
210
1
±100
V
mV/°C
P A
nA
On Characteristics
V GS(th)
' V GS(th )
' T J
Gate to Source Threshold Voltage
Gate to Source Threshold Voltage
Temperature Coefficient
V GS = V DS , I D = 250 P A
I D = 250 P A, referenced to 25°C
2
3.1
-10
4
V
mV/°C
V GS = 10V, I D = 3.7A
64
77
r DS(on)
Drain to Source On Resistance
V GS = 6V, I D = 3.5A
69
88
m :
V GS = 10V, I D = 3.7A T J = 125°C
129
156
g FS
Forward Transconductance
V DS = 10V, I D = 3.7A
14
S
Dynamic Characteristics
C iss
C oss
C rss
R g
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
V DS = 100V, V GS = 0V,
f = 1MHz
0.1
1740
95
30
1
2315
125
45
5
pF
pF
pF
:
Switching Characteristics
t d(on)
t r
t d(off)
t f
Q g(TOT)
Q gs
Q gd
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge at 10V
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
V DD = 100V, I D = 3.7A
V GS = 10V, R GEN = 6 :
V GS = 0V to 10V V DD = 100V
I D = 3.7A
22
11
36
10
30
7
8
34
22
57
20
42
ns
ns
ns
ns
nC
nC
nC
Drain-Source Diode Characteristics
V SD
Source to Drain Diode Forward Voltage
V GS = 0V, I S = 3.7A
(Note 2)
0.8
1.2
V
t rr
Q rr
Reverse Recovery Time
Reverse Recovery Charge
I F = 3.7A, di/dt = 100A/ P s
70
238
105
357
ns
nC
Notes:
1: R T JA is determined with the device mounted on a 1in 2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. R T JC is guaranteed by design while R T CA is determined by
the user's board design.
a. 50°C/W when mounted on
a 1 in 2 pad of 2 oz copper
2: Pulse Test: Pulse Width < 300 P s, Duty cycle < 2.0%.
3: E AS of 33.8mJ is based on starting T J = 25 ° C, L = 3mH, I AS = 4.75A, V DD = 25V, V GS = 10V.
b. 125°C/W when mounted on a
minimum pad of 2 oz copper
FDMS2672 Rev.C1
2
www.fairchildsemi.com
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| FDMS2672_12 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:N-Channel UltraFET Trench MOSFET 200V, 20A, 77m |
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| FDMS3008SDC | 功能描述:MOSFET 30V N-Chan Dual Cool PowerTrench SyncFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDMS3016DC | 功能描述:MOSFET 30V N-Channel Dual Cool PwrTrench RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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