- 您现在的位置：买卖IC网 > Datasheet目录421 > FDMS2734 (Fairchild Semiconductor)MOSFET N-CH 250V 2.8A POWER56 Datasheet资料下载
参数资料
| 型号： | FDMS2734 |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 2/7页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 250V 2.8A POWER56 |
| 产品变化通告： | Design/Process Change 22/Aug/2007 |
| 产品目录绘图： | Power56 Single |
| 标准包装： | 1 |
| 系列： | UltraFET™ |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 250V |
| 电流 - 连续漏极(Id) @ 25° C： | 2.8A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 122 毫欧 @ 2.8A，10V |
| Id 时的 Vgs(th)（最大）： | 4V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 42nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 2365pF @ 100V |
| 功率 - 最大： | 2.5W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-MLP，Power56 |
| 供应商设备封装： | Power56 |
| 包装： | 标准包装 |
| 产品目录页面： | 1609 (CN2011-ZH PDF) |
| 其它名称： | FDMS2734DKR |
Electrical Characteristics T J = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BV DSS
' BV DS S
' T J
I DSS
I GSS
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
I D = 250 P A, V GS = 0V
I D = 250 P A, referenced to 25°C
V DS = 200V,
V GS = ±20V, V GS = 0V
250
250
1
±100
V
mV/°C
P A
nA
On Characteristics (Note 2)
V GS(th)
' V GS(th )
' T J
Gate to Source Threshold Voltage
Gate to Source Threshold Voltage
Temperature Coefficient
V GS = V DS , I D = 250 P A
I D = 250 P A, referenced to 25°C
2
3
-11
4
V
mV/°C
V GS = 10V, I D = 2.8A
105
122
r DS(on)
Drain to Source On Resistance
V GS = 6V,
I D = 1.7A
110
130
m :
V GS = 10V, I D = 2.8A T J = 125°C
217
258
g FS
Forward Transconductance
V DS = 10V, I D = 2.8A
11
S
Dynamic Characteristics
C iss
C oss
C rss
R g
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
V DS = 100V, V GS = 0V,
f = 1MHz
f = 1MHz
1775
80
25
0.9
2365
110
40
pF
pF
pF
:
Switching Characteristics
t d(on)
t r
t d(off)
t f
Q g(TOT)
Q gs
Q gd
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge at 10V
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
V DD = 125V, I D = 2.8A
V GS = 10V, R GEN = 6 :
V GS = 0V to 10V V DD = 125V
I D = 2.8A
22
10
36
12
30
7
9
36
20
58
22
42
ns
ns
ns
ns
nC
nC
nC
Drain-Source Diode Characteristics
V SD
Source to Drain Diode Forward Voltage
V GS = 0V, I S = 2.8A
(Note 2)
0.75
1.20
V
t rr
Q rr
Reverse Recovery Time
Reverse Recovery Charge
I F = 2.8A, di/dt = 100A/ P s
79
214
119
321
ns
nC
Notes:
1: R T JA is determined with the device mounted on a 1 in 2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. R T JC is guaranteed by design while R T CA is determined
by the user's board design.
a. 50°C/W when mounted on
a 1 in 2 pad of 2 oz copper
2: Pulse Test: Pulse Width < 300 P s, Duty cycle < 2.0%.
b. 125°C/W when mounted on a
minimum pad of 2 oz copper
FDMS2734 Rev.C1
2
www.fairchildsemi.com
相关PDF资料 |
PDF描述 |
|---|---|
| FDMS3006SDC | MOSFET N-CH 30V 34A 8-PQFN |
| FDMS3008SDC | MOSFET N-CH 30V 29A 8-PQFN |
| FDMS3016DC | MOSFET N-CH 30V 18A 8-PQFN |
| FDMS3500 | MOSFET N-CH 75V 9.2A POWER56 |
| FDMS3572 | MOSFET N-CH 80V 8.8A POWER56 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| FDMS3006SDC | 功能描述:MOSFET 30V N-Chan Dual Cool PowerTrench SyncFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDMS3008SDC | 功能描述:MOSFET 30V N-Chan Dual Cool PowerTrench SyncFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDMS3016DC | 功能描述:MOSFET 30V N-Channel Dual Cool PwrTrench RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDMS3500 | 功能描述:MOSFET 75V N-Channel PowerTrench RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDMS3572 | 功能描述:MOSFET 80V N-Ch UltraFET PowerTrench MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
发布紧急采购，3分钟左右您将得到回复。