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参数资料
| 型号： | FDMS3008SDC |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 2/9页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 30V 29A 8-PQFN |
| 标准包装： | 3,000 |
| 系列： | Dual Cool™, PowerTrench®, SyncFET™ |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 30V |
| 电流 - 连续漏极(Id) @ 25° C： | 29A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 2.6 毫欧 @ 28A，10V |
| Id 时的 Vgs(th)（最大）： | 3V @ 1mA |
| 闸电荷(Qg) @ Vgs： | 64nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 4520pF @ 15V |
| 功率 - 最大： | 3.3W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-PowerTDFN |
| 供应商设备封装： | Power56 |
| 包装： | * |
Electrical Characteristics T J = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BV DSS
Δ BV DSS
Δ T J
I DSS
I GSS
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Source Leakage Current, Forward
I D = 1 mA, V GS = 0 V
I D = 10 mA, referenced to 25°C
V DS = 24 V, V GS = 0 V
V GS = 20 V, V DS = 0 V
30
13
500
100
V
mV/°C
μ A
nA
On Characteristics
V GS(th)
Δ V GS(th)
Δ T J
Gate to Source Threshold Voltage
Gate to Source Threshold Voltage
Temperature Coefficient
V GS = V DS , I D = 1 mA
I D = 10 mA, referenced to 25°C
1.2
1.9
-5
3.0
V
mV/°C
V GS = 10 V, I D = 28 A
1.8
2.6
r DS(on)
Static Drain to Source On Resistance
V GS = 4.5 V, I D = 22 A
2.7
3.3
m Ω
V GS = 10 V, I D = 28 A, T J = 125°C
2.4
3.6
g FS
Forward Transconductance
V DS = 5 V, I D = 28 A
144
S
Dynamic Characteristics
C iss
C oss
C rss
R g
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
V DS = 15 V, V GS = 0 V,
f = 1MHz
3400
1115
80
0.7
4520
1485
120
pF
pF
pF
Ω
Switching Characteristics
t d(on)
Turn-On Delay Time
15
27
ns
t r
t d(off)
t f
Q g
Q g
Q gs
Q gd
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Total Gate Charge
Gate to Source Charge
Gate to Drain “Miller” Charge
V DD = 15 V, I D = 28 A,
V GS = 10 V, R GEN = 6 Ω
V GS = 0 V to 10 V
V GS = 0 V to 4.5 V V DD = 15 V,
I D = 28 A
4.7
33
3
46
21
9.6
4.3
10
53
10
64
29
ns
ns
ns
nC
nC
nC
nC
Drain-Source Diode Characteristics
V SD
Source-Drain Diode Forward Voltage
V GS = 0 V, I S = 2 A
V GS = 0 V, I S = 28 A
(Note 2)
(Note 2)
0.4
0.8
0.8
1.2
V
t rr
Q rr
Reverse Recovery Time
Reverse Recovery Charge
I F = 28 A, di/dt = 300 A/ μ s
32
39
51
62
ns
nC
?2012 Fairchild Semiconductor Corporation
FDMS3008SDC Rev.C4
2
www.fairchildsemi.com
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