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| 型号： | FDMS3662 |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 2/7页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 100V 8.9A POWER56 |
| 产品变化通告： | Power 56 Pkg/Design Change 14/Apr/2009 |
| 产品目录绘图： | Power56 Single |
| 标准包装： | 1 |
| 系列： | PowerTrench® |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 100V |
| 电流 - 连续漏极(Id) @ 25° C： | 8.9A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 14.8 毫欧 @ 8.9A，10V |
| Id 时的 Vgs(th)（最大）： | 4.5V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 75nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 4620pF @ 50V |
| 功率 - 最大： | 2.5W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-PQFN，Power56 |
| 供应商设备封装： | Power56 |
| 包装： | 标准包装 |
| 产品目录页面： | 1609 (CN2011-ZH PDF) |
| 其它名称： | FDMS3662DKR |
Electrical Characteristics T J = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BV DSS
Δ BV DS S
Δ T J
I DSS
I GSS
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
I D = 250 μ A, V GS = 0V
I D = 250 μ A, referenced to 25°C
V GS = 0V, V DS = 80V,
V GS = ±20V, V DS = 0V
100
74
1
±100
V
mV/°C
μ A
nA
On Characteristics
V GS(th)
Δ V GS(th)
Δ T J
r DS(on)
g FS
Gate to Source Threshold Voltage
Gate to Source Threshold Voltage
Temperature Coefficient
Static Drain to Source On Resistance
Forward Transconductance
V GS = V DS , I D = 250 μ A
I D = 250 μ A, referenced to 25°C
V GS = 10V, I D = 8.9A
V GS = 10V, I D = 8.9A, T J = 125°C
V DD = 10V, I D = 8.9A
2.5
3.5
-10.8
11.4
19.0
37
4.5
14.8
24.7
V
mV/°C
m Ω
S
Dynamic Characteristics
C iss
C oss
C rss
R g
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
V DS = 50V, V GS = 0V,
f = 1MHz
f = 1MHz
3470
245
110
1.4
4620
325
165
pF
pF
pF
Ω
Switching Characteristics
t d(on)
Turn-On Delay Time
25
40
ns
t r
t d(off)
t f
Q g
Q gs
Q gd
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge at 10V
Gate to Source Charge
Gate to Drain “Miller” Charge
V DD = 50V, I D = 8.9A,
V GS = 10V, R GEN = 6 Ω
V DD = 50V,
I D = 8.9A
15
32
6
54
18
15
26
52
10
75
ns
ns
ns
nC
nC
nC
Drain-Source Diode Characteristics
V SD
Source to Drain Diode Forward Voltage
V GS = 0V, I S = 8.9A
V GS = 0V, I S = 2.1A
(Note 2)
(Note 2)
0.8
0.7
1.3
1.2
V
t rr
Q rr
Reverse Recovery Time
Reverse Recovery Charge
I F = 8.9A, di/dt = 100A/ μ s
45
71
73
115
ns
nC
NOTES:
1. R θ JA is determined with the device mounted on a 1in 2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. R θ JC is guaranteed by design while R θ CA is determined by
the user's board design.
a. 50°C/W when mounted on a
1 in 2 pad of 2 oz copper.
2. Pulse Test: Pulse Width < 300 μ s, Duty cycle < 2.0%.
3. Starting T J = 25 ° C, L = 3mH, I AS = 16A, V DD = 100V, V GS = 10V
b. 125°C/W when mounted on a
minimum pad of 2 oz copper.
?2009 Fairchild Semiconductor Corporation
FDMS3662 Rev.C2
2
www.fairchildsemi.com
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