参数资料
型号: FDMS3668S
厂商: Fairchild Semiconductor
文件页数: 3/16页
文件大小: 0K
描述: MOSFET N-CH 30V DUAL 8-PQFN
标准包装: 3,000
系列: PowerTrench®
FET 型: 2 N 沟道(双)非对称型
FET 特点: 逻辑电平门
漏极至源极电压(Vdss): 30V
电流 - 连续漏极(Id) @ 25° C: 13A,18A
开态Rds(最大)@ Id, Vgs @ 25° C: 8 毫欧 @ 13A,10V
Id 时的 Vgs(th)(最大): 2.7V @ 250µA
闸电荷(Qg) @ Vgs: 29nC @ 10V
输入电容 (Ciss) @ Vds: 1765pF @ 15V
功率 - 最大: 1W
安装类型: 表面贴装
封装/外壳: 8-TDFN 裸露焊盘
供应商设备封装: 8-PQFN(5x6)
包装: 带卷 (TR)
Electrical Characteristics T J = 25 °C unless otherwise noted
Symbol
Parameter
Test Conditions
Type
Min
Typ
Max
Units
Drain-Source Diode Characteristics
V GS = 0 V, I S = 13 A
(Note 2)
Q1
0.8
1.2
V SD
Source to Drain Diode Forward Voltage
V GS = 0 V, I S = 2 A
V GS = 0 V, I S = 17 A
(Note 2)
(Note 2)
Q1
Q2
0.7
0.8
1.2
1.2
V
V GS = 0 V, I S = 2 A
(Note 2)
Q2
0.7
1.2
t rr
Q rr
Reverse Recovery Time
Reverse Recovery Charge
Q1:
I F = 13 A, di/dt = 100 A/ μ s
Q2:
I F = 17 A, di/dt = 300 A/ μ s
Q1
Q2
Q1
Q2
26
21
10
17
42
33
20
31
ns
nC
Notes:
1: R θ JA is determined with the device mounted on a 1 in 2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. R θ JC is guaranteed by design while R θ CA is determined
by the user's board design.
a. 57 °C/W when mounted on
a 1 in 2 pad of 2 oz copper
c. 125 °C/W when mounted on a
minimum pad of 2 oz copper
b. 50 °C/W when mounted on
a 1 in 2 pad of 2 oz copper
d. 120 °C/W when mounted on a
minimum pad of 2 oz copper
2: Pulse Test: Pulse Width < 300 μ s, Duty cycle < 2.0%.
3: As an N-ch device, the negative Vgs rating is for low duty cycle pulse ocurrence only. No continuous rating is implied with the negative Vgs rating.
4: E AS of 33 mJ is based on starting T J = 25 o C; N-ch: L = 1.9 mH, I AS = 6 A, V DD = 27 V, V GS = 10 V. 100% test at L= 0.1 mH, I AS = 16 A.
5: E AS of 21 mJ is based on starting T J = 25 o C; N-ch: L = 0.5 mH, I AS = 9 A, V DD = 27 V, V GS = 10 V. 100% test at L= 0.1 mH, I AS = 16 A.
?2012 Fairchild Semiconductor Corporation
FDMS3668S Rev.C3
3
www.fairchildsemi.com
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