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| 型号： | FDMS5672 |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 2/7页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 60V 10.6A POWER56 |
| 产品培训模块： | High Voltage Switches for Power Processing |
| 产品变化通告： | Design/Process Change 22/Aug/2007 |
| 产品目录绘图： | Power56 Single |
| 标准包装： | 1 |
| 系列： | UltraFET™ |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 60V |
| 电流 - 连续漏极(Id) @ 25° C： | 10.6A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 11.5 毫欧 @ 10.6A，10V |
| Id 时的 Vgs(th)（最大）： | 4V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 45nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 2800pF @ 30V |
| 功率 - 最大： | 2.5W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-MLP，Power56 |
| 供应商设备封装： | Power56 |
| 包装： | 标准包装 |
| 产品目录页面： | 1609 (CN2011-ZH PDF) |
| 其它名称： | FDMS5672DKR |
Electrical Characteristics T J = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BV DSS
? BV DS S
? T J
I DSS
I GSS
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
I D = 250 μ A, V GS = 0V
I D = 250 μ A, referenced to 25°C
V DS = 48V, V GS = 0V
V GS = ±20V, V DS = 0V
60
59
1
±100
V
mV /° C
μ A
nA
On Characteristics
V GS(th)
? V GS(th )
? T J
Gate to Source Threshold Voltage
Gate to Source Threshold Voltage
Temperature Coefficient
V GS = V DS , I D = 250 μ A
I D = 250 μ A, referenced to 25°C
2
3.2
-11
4
V
mV/°C
V GS = 10V, I D = 10.6A
9.4
11.5
r DS(on)
g FS
Drain to Source On Resistance
Forward Transconductance
V GS = 6V, I D = 8A
V GS = 10V, I D = 10.6A,
T J = 125°C
V DS = 10V, I D = 10.6A
13.0
15.0
26
16.5
18.0
m ?
S
Dynamic Characteristics
C iss
C oss
C rss
R g
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
V DS = 30V, V GS = 0V,
f = 1MHz
f = 1MHz
2100
375
120
1.2
2800
500
180
pF
pF
pF
?
Switching Characteristics
t d(on)
Turn-On Delay Time
16
29
ns
t r
t d(off)
t f
Rise Time
Turn-Off Delay Time
Fall Time
V DD = 30V, I D = 10.6A
V GS = 10V, R GEN = 6 ?
17
22
8
31
35
16
ns
ns
ns
Q g(TOT)
Q gs
Q gd
Total Gate Charge at 10V
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
V GS = 0V to 10V
V DD = 30V
I D = 10.6A
32
10
8.3
45
nC
nC
nC
Drain-Source Diode Characteristics
V SD
Source to Drain Diode Forward Voltage
V GS = 0V, I S = 10.6A
(Note 2)
0.80
1.20
V
t rr
Q rr
Reverse Recovery Time
Reverse Recovery Charge
I F = 10.6A, di/dt = 100A/ μ s
35
42
53
63
ns
nC
Notes:
1: R θ JA is determined with the device mounted on a 1in 2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. R θ JC is guaranteed by design while R θ CA is determined by
the user's board design.
a. 50°C/W when mounted on a
1 in 2 pad of 2 oz copper
2: Pulse Test: Pulse Width < 30 0 μ s, Duty cycle < 2.0%.
3: Starting T J = 25 ° C, L = 3mH, I AS = 15A, V DD = 60V, V GS = 10V.
FDMS5672 Rev.C2
2
b. 125°C/W when mounted on
minimum pad of 2 oz copper
a
www.fairchildsemi.com
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相关代理商/技术参数 |
参数描述 |
|---|---|
| FDMS5672_0712 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:N-Channel UltraFET Trench㈢ MOSFET |
| FDMS6673BZ | 功能描述:MOSFET -30V 28A P-Channel PowerTrench RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDMS6681Z | 功能描述:MOSFET -30V P-Channel PowerTrench RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDMS6682Z | 制造商:Fairchild Semiconductor Corporation 功能描述: |
| FDMS7556S | 功能描述:MOSFET 25V N-Channel PowerTrench SyncFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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