参数资料
型号: FDMS7670
厂商: Fairchild Semiconductor
文件页数: 3/7页
文件大小: 0K
描述: MOSFET N-CH 30V 21A POWER56
产品变化通告: Power 56 Pkg/Design Change 14/Apr/2009
产品目录绘图: Power56 Single
标准包装: 1
系列: PowerTrench®
FET 型: MOSFET N 通道,金属氧化物
FET 特点: 逻辑电平门
漏极至源极电压(Vdss): 30V
电流 - 连续漏极(Id) @ 25° C: 21A
开态Rds(最大)@ Id, Vgs @ 25° C: 3.8 毫欧 @ 21A,10V
Id 时的 Vgs(th)(最大): 3V @ 250µA
闸电荷(Qg) @ Vgs: 56nC @ 10V
输入电容 (Ciss) @ Vds: 4105pF @ 15V
功率 - 最大: 2.5W
安装类型: 表面贴装
封装/外壳: 8-PQFN,Power56
供应商设备封装: Power56
包装: 标准包装
产品目录页面: 1609 (CN2011-ZH PDF)
其它名称: FDMS7670DKR
Typical Characteristics T J = 25 °C unless otherwise noted
150
120
V GS = 10 V
V GS = 5 V
V GS = 4.5 V
V GS = 4 V
5
4
PULSE DURATION = 80 μ s
DUTY CYCLE = 0.5% MAX
V GS = 3.5 V
V GS = 4 V
90
3
60
30
V GS = 3.5 V
2
1
V GS = 4.5 V
0
PULSE DURATION = 80 μ s
DUTY CYCLE = 0.5% MAX
0
V GS = 5 V
V GS = 10 V
0.0
0.5
1.0
1.5
2.0
0
30
60
90
120
150
V DS , DRAIN TO SOURCE VOLTAGE (V)
Figure 1. On Region Characteristics
1.6
I D , DRAIN CURRENT (A)
Figure 2. Normalized On-Resistance
vs Drain Current and Gate Voltage
15
1.4
I D = 21 A
V GS = 10 V
12
I D = 21 A
PULSE DURATION = 80 μ s
DUTY CYCLE = 0.5% MAX
1.2
9
1.0
0.8
6
3
T J = 125 o C
T J = 25 o C
0.6
-75
-50
-25 0 25 50 75 100 125 150
0
2
4
6
8
10
T J , JUNCTION TEMPERATURE ( o C )
Figure 3. Normalized On Resistance
vs Junction Temperature
150
V GS , GATE TO SOURCE VOLTAGE (V)
Figure 4. On-Resistance vs Gate to
Source Voltage
500
120
90
PULSE DURATION = 80 μ s
DUTY CYCLE = 0.5% MAX
V DS = 5 V
100
10
V GS = 0 V
60
30
T J = 150 o C
T J = 25 o C
T J = -55 o C
1
0.1
0.01
T J = 150 o C
T J = 25 o C
T J = -55 o C
0
1
2
3
4
5
0.001
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V GS , GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics
V SD , BODY DIODE FORWARD VOLTAGE (V)
Figure 6. Source to Drain Diode
Forward Voltage vs Source Current
?2012 Fairchild Semiconductor Corporation
FDMS7670 Rev . D2
3
www.fairchildsemi.com
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