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| 型号： | FDMS86300 |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 2/7页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 80V 19A POWER56 |
| 标准包装： | 1 |
| 系列： | PowerTrench® |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 80V |
| 电流 - 连续漏极(Id) @ 25° C： | 19A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 3.9 毫欧 @ 19A，10V |
| Id 时的 Vgs(th)（最大）： | 4.5V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 86nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 7082pF @ 40V |
| 功率 - 最大： | 2.5W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-PowerTDFN |
| 供应商设备封装： | Power56 |
| 包装： | 标准包装 |
| 其它名称： | FDMS86300DKR |
Electrical Characteristics T J = 25 °C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BV DSS
Δ BV DSS
Δ T J
I DSS
I GSS
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
I D = 250 μ A, V GS = 0 V
I D = 250 μ A, referenced to 25 °C
V DS = 64 V, V GS = 0 V
V GS = ±20 V, V DS = 0 V
80
39
1
±100
V
mV/°C
μ A
nA
On Characteristics
V GS(th)
Δ V GS(th)
Δ T J
Gate to Source Threshold Voltage
Gate to Source Threshold Voltage
Temperature Coefficient
V GS = V DS , I D = 250 μ A
I D = 250 μ A, referenced to 25 °C
2.5
3.4
-11
4.5
V
mV/°C
V GS = 10 V, I D = 19 A
3.2
3.9
r DS(on)
Static Drain to Source On Resistance
V GS = 8 V, I D = 15.5 A
3.8
5.5
m Ω
V GS = 10 V, I D = 19 A, T J = 125 °C
5.0
5.8
g FS
Forward Transconductance
V DS = 10 V, I D = 19 A
60
S
Dynamic Characteristics
C iss
C oss
C rss
R g
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
V DS = 40 V, V GS = 0 V,
f = 1 MHz
5325
957
26
1.2
7082
1272
63
pF
pF
pF
Ω
Switching Characteristics
t d(on)
Turn-On Delay Time
31
50
ns
t r
t d(off)
t f
Q g
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
V DD = 40 V, I D = 19 A,
V GS = 10 V, R GEN = 6 Ω
V GS = 0 V to 10 V
26
36
9
72
43
58
18
86
ns
ns
ns
nC
Q g
Q gs
Total Gate Charge
Gate to Source Charge
V GS = 0 V to 8 V
V DD = 40 V,
I D = 19 A
59
28.2
71
nC
nC
Q gd
Gate to Drain “Miller” Charge
14.9
nC
Drain-Source Diode Characteristics
V SD
t rr
Q rr
t rr
Q rr
Source to Drain Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Time
Reverse Recovery Charge
V GS = 0 V, I S = 2.1 A
V GS = 0 V, I S = 19 A
I F = 19 A, di/dt = 100 A/ μ s
I F = 19 A, di/dt = 300 A/ μ s
(Note 2)
(Note 2)
0.71
0.81
57
50
48
103
1.2
1.3
90
80
77
165
V
ns
nC
ns
nC
Notes :
1. R θ JA is determined with the device mounted on a 1 in 2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. R θ JC is guaranteed by design while R θ CA is determined by
the user's board design.
a) 50 °C/W when mounted on a
1 in 2 pad of 2 oz copper
2. Pulse Test: Pulse Width < 300 μ s, Duty cycle < 2.0%.
3. E AS of 252 mJ is based on starting T J = 25 ° C, L = 0.3 mH, I AS = 41 A, V DD = 72 V, V GS = 10 V.
4. Pulse Id limited by junction temperature, td ≤ 100 μ s, please refer to SOA curve for more details.
b) 125 °C/W when mounted on a
minimum pad of 2 oz copper.
?2012 Fairchild Semiconductor Corporation
FDMS86300 Rev.C1
2
www.fairchildsemi.com
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