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| 型号： | FDN335N |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 2/5页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 20V 1.7A SSOT3 |
| 产品培训模块： | High Voltage Switches for Power Processing |
| 产品变化通告： | Mold Compound Change 08/April/2008 |
| 产品目录绘图： | SuperSOT-3, SOT-23 |
| 标准包装： | 1 |
| 系列： | PowerTrench® |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 20V |
| 电流 - 连续漏极(Id) @ 25° C： | 1.7A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 70 毫欧 @ 1.7A，4.5V |
| Id 时的 Vgs(th)（最大）： | 1.5V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 5nC @ 4.5V |
| 输入电容 (Ciss) @ Vds： | 310pF @ 10V |
| 功率 - 最大： | 460mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-236-3，SC-59，SOT-23-3 |
| 供应商设备封装： | 3-SSOT |
| 包装： | 标准包装 |
| 产品目录页面： | 1602 (CN2011-ZH PDF) |
| 其它名称： | FDN335NDKR |
Electrical Characteristics
T A = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min Typ
Max
Units
Off Characteristics
BV DSS
? BV DSS
? T J
I DSS
I GSSF
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate-Body Leakage Current,
V GS = 0 V, I D = 250 μ A
I D = 250 μ A,Referenced to 25 ° C
V DS = 16 V, V GS = 0 V
V GS = 8 V, V DS = 0 V
20
14
1
100
V
mV/ ° C
μ A
nA
Forward
I GSSR
Gate-Body Leakage Current,
V GS = -8 V, V DS = 0 V
-100
nA
Reverse
On Characteristics
(Note 2)
V GS(th)
? V GS(th)
? T J
R DS(ON)
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
Static Drain-Source
On-Resistance
V DS = V GS , I D = 250 μ A
I D = 250 μ A,Referenced to 25 ° C
V GS = 4.5 V, I D = 1.7 A
V GS = 4.5 V, I D = 1.7 A,T J = 125 ° C
0.4
0.9
-3
0.055
0.079
1.5
0.070
0.120
V
mV/ ° C
?
V GS = 2.5 V, I D = 1.5 A
0.078
0.100
I D(on)
g FS
On-State Drain Current
Forward Transconductance
V GS = 4.5 V, V DS = 5 V
V DS = 5 V, I D = 1.5 A
8
7
A
S
Dynamic Characteristics
C iss
C oss
C rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V DS = 10 V, V GS = 0 V,
f = 1.0 MHz
310
80
40
pF
pF
pF
Switching Characteristics
(Note 2)
t d(on)
t r
t d(off)
t f
Q g
Q gs
Q gd
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V DD = 10 V, I D = 1 A,
V GS = 4.5 V, R GEN = 6 ?
V DS = 10 V, I D = 1.7 A,
V GS = 4.5 V,
5
8.5
11
3
3.5
0.55
0.95
15
17
20
10
5
ns
ns
ns
ns
nC
nC
nC
Drain-Source Diode Characteristics and Maximum Ratings
I S
Maximum Continuous Drain-Source Diode Forward Current
0.42
A
V SD
Drain-Source Diode Forward
V GS = 0 V, I S = 0.42 A
(Note 2)
0.7
1.2
V
Voltage
Notes:
1: R θ JA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting
surface of the drain pins. R θ JC is guaranteed by design while R θ CA is determined by the user's board design.
a) 250 ° C/W when
mounted on a 0.02 in 2
b) 270 ° C/W when mounted
on a minimum pad.
Pad of 2 oz. Cu.
Scale 1 : 1 on letter size paper
2: Pulse Test: Pulse Width ≤ 300 μ s, Duty Cycle ≤ 2.0%
FDN335N Rev. C
相关PDF资料 |
PDF描述 |
|---|---|
| FDN336P-NL | MOSFET P-CH 20V 1.3A SSOT-3 |
| FDN337N | MOSFET N-CH 30V 2.2A SSOT3 |
| FDN338P | MOSFET P-CH 20V 1.6A SSOT3 |
| FDN339AN | MOSFET N-CH 20V 3A SSOT3 |
| FDN340P | MOSFET P-CH 20V 2A SSOT3 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| FDN335N | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET N SOT-23 |
| FDN335N_NL | 功能描述:MOSFET N-CH 20V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDN335N_Q | 功能描述:MOSFET SSOT-3 N-CH 20V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDN335N-CUT TAPE | 制造商:FAIRCHILD 功能描述:FDN335N Series 20 V 0.07 Ohm N-Channel 2.5V Specified PowerTrench Mosfet SSOT-3 |
| FDN336 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:Single P-Channel 2.5V Specified PowerTrenchTM MOSFET |
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