- 您现在的位置：买卖IC网 > Datasheet目录423 > FDN336P-NL (Fairchild Semiconductor)MOSFET P-CH 20V 1.3A SSOT-3 Datasheet资料下载
参数资料
| 型号： | FDN336P-NL |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 1/5页 |
| 文件大小： | 0K |
| 描述： | MOSFET P-CH 20V 1.3A SSOT-3 |
| 标准包装： | 3,000 |
| 系列： | PowerTrench® |
| FET 型： | MOSFET P 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 20V |
| 电流 - 连续漏极(Id) @ 25° C： | 1.3A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 200 毫欧 @ 1.3A，4.5V |
| Id 时的 Vgs(th)（最大）： | 1.5V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 5nC @ 4.5V |
| 输入电容 (Ciss) @ Vds： | 330pF @ 10V |
| 功率 - 最大： | 460mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-236-3，SC-59，SOT-23-3 |
| 供应商设备封装： | 3-SSOT |
| 包装： | 带卷 (TR) |
| 其它名称： | 376S0091 Q2069479 |
January 2005
FDN336P
Single P-Channel 2.5V Specified PowerTrench ? MOSFET
General Description
Features
This P-Channel 2.5V specified MOSFET is produced
using Fairchild Semiconductor’s advanced
PowerTrench process that has been especially tailored
to minimize the on-state resistance and yet maintain
low gate charge for superior switching performance.
These devices are well suited for portable electronics
applications: load switching and power management,
?
?
?
–1.3 A, –20 V. R DS(ON) = 0.20 ? @ V GS = –4.5 V
R DS(ON) = 0.27 ? @ V GS = –2.5 V
Low gate charge (3.6 nC typical)
High performance trench technology for extremely
low R DS(ON)
SuperSOT
battery charging circuits and DC/DC conversion.
?
TM
-3 provides low R DS(ON) and 30%
higher power handling capability than SOT23 in
the same footprint
D
S
D
G
S
SuperSOT -3
TM
G
Absolute Maximum Ratings
T A =25 o C unless otherwise noted
Symbol
V DSS
V GSS
Parameter
Drain-Source Voltage
Gate-Source Voltage
Ratings
–20
± 8
Units
V
V
I D
Drain Current
– Continuous
(Note 1a)
– 1.3
A
– Pulsed
–10
P D
Maximum Power Dissipation
(Note 1a)
0.5
W
(Note 1b)
0.46
T J , T STG
Operating and Storage Junction Temperature Range
–55 to +150
° C
Thermal Characteristics
R θ JA
R θ JC
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
250
75
° C/W
° C/W
Package Marking and Ordering Information
Device Marking
336
Device
FDN336P
Reel Size
7’’
Tape width
8mm
Quantity
3000 units
? 2005 Fairchild Semiconductor Corporation
FDN306P Rev D
相关PDF资料 |
PDF描述 |
|---|---|
| FDN337N | MOSFET N-CH 30V 2.2A SSOT3 |
| FDN338P | MOSFET P-CH 20V 1.6A SSOT3 |
| FDN339AN | MOSFET N-CH 20V 3A SSOT3 |
| FDN340P | MOSFET P-CH 20V 2A SSOT3 |
| FDN342P | MOSFET P-CH 20V 2A SSOT-3 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| FDN337N | 功能描述:MOSFET SSOT-3 N-CH 30V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDN337N | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET N SOT-23 |
| FDN337N_G | 制造商:Fairchild 功能描述:30V/20A MOSFET SOT-3 (Halogen free) |
| FDN337N_Q | 功能描述:MOSFET SSOT-3 N-CH 30V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDN337N-CUT TAPE | 制造商:FAIRCHILD 功能描述:FDN337 Series 30 V 65 mOhm N-Ch Field Effect Transistor - SSOT-3 |
发布紧急采购，3分钟左右您将得到回复。