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参数资料
| 型号： | FDN340P |
| 厂商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分类： | 小信号晶体管 |
| 英文描述： | Single P-Channel, Logic Level, PowerTrench MOSFET |
| 中文描述： | 2000 mA, 20 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封装： | SUPERSOT-3 |
| 文件页数： | 2/8页 |
| 文件大小： | 273K |
| 代理商： | FDN340P |
FDN340P Rev C (W)
Electrical Characteristics
T
A
= 25°C unless otherwise noted
Test Conditions
Symbol
Parameter
Min
Typ
Max
Units
Off Characteristics
BV
DSS
Drain–Source Breakdown Voltage
BV
DSS
T
J
Coefficient
V
GS
= 0 V, I
D
= –250
μ
A
–20
V
Breakdown Voltage Temperature
I
D
= –250
μ
A,Referenced to 25
°
C
–15
mV/
°
C
V
DS
= –16 V,
V
GS
= 0 V
T
J
=55
°
C
V
DS
= 0 V
V
DS
= 0 V
–1
–10
100
–100
μ
A
I
DSS
Zero Gate Voltage Drain Current
I
GSSF
I
GSSR
Gate–Body Leakage, Forward
Gate–Body Leakage, Reverse
V
GS
= 8 V,
V
GS
= –8 V
nA
nA
On Characteristics
V
GS(th)
Gate Threshold Voltage
V
GS(th)
T
J
Temperature Coefficient
R
DS(on)
Static Drain–Source
On–Resistance
(Note 2)
V
DS
= V
GS
, I
D
= –250
μ
A
I
D
= –250
μ
A,Referenced to 25
°
C
–0.4
–0.9
–1.5
V
Gate Threshold Voltage
2.7
mV/
°
C
V
GS
= –4.5 V,
I
D
= –2 A
0.052
0.075
0.078
0.07
0.12
0.11
0.21
T
J
=125
°
C
I
D
= –1.7A,
I
D
= –1.2 A,
V
DS
= –5 V
I
D
= –2 A
V
GS
= –2.5 V,
V
GS
= –1.8 V,
V
GS
= –4.5 V,
V
DS
= –4.5 V,
I
D(on)
g
FS
On–State Drain Current
Forward Transconductance
–5
A
S
8
Dynamic Characteristics
C
iss
Input Capacitance
C
oss
Output Capacitance
C
rss
Reverse Transfer Capacitance
600
175
80
pF
pF
pF
V
DS
= –10 V,
f = 1.0 MHz
V
GS
= 0 V,
Switching Characteristics
t
d(on)
Turn–On Delay Time
t
r
Turn–On Rise Time
t
d(off)
Turn–Off Delay Time
t
f
Turn–Off Fall Time
Q
g
Total Gate Charge
Q
gs
Gate–Source Charge
Q
gd
Gate–Drain Charge
(Note 2)
6
9
31
26
8
1.3
2.2
12
18
50
42
11
ns
ns
ns
ns
nC
nC
nC
V
DD
= –5 V,
V
GS
= –4.5 V,
I
D
= –0.5 A,
R
GEN
= 6
V
DS
= –10V,
V
GS
= –4.5 V
I
D
= –2 A,
Drain–Source Diode Characteristics and Maximum Ratings
I
S
Maximum Continuous Drain–Source Diode Forward Current
Drain–Source Diode Forward
Voltage
–0.42
A
V
SD
V
GS
= 0 V,
I
S
= –0.42 A
(Note )
–0.7
–1.2
V
Notes:
1.
R
JA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. R
θ
JC
is guaranteed by design while R
θ
CA
is determined by the user's board design.
a. 250°C/W when mounted on a
0.02in
pad of 2 oz copper
b. 270°C/W when mounted on a
.001 in
pad of 2 oz copper
Scale 1 : 1 on letter size paper
2.
Pulse Test: Pulse Width < 300
μ
s, Duty Cycle < 2.0%
F
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相关代理商/技术参数 |
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|---|---|
| FDN340P | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET P SOT-23 |
| FDN340P_07 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:Single P-Channel, Logic Level, PowerTrench?MOSFET |
| FDN340P-CUT TAPE | 制造商:FAIRCHILD 功能描述:FDN340P Series 20V 70 mOhm Single P-Ch Logic Level PowerTrench Mosfet SSOT-3 |
| FDN342P | 功能描述:MOSFET SSOT-3 P-CH -20V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDN342P | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET |
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