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参数资料
| 型号： | FDN340P |
| 厂商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分类： | 小信号晶体管 |
| 英文描述： | Single P-Channel, Logic Level, PowerTrench MOSFET |
| 中文描述： | 2000 mA, 20 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封装： | SUPERSOT-3 |
| 文件页数： | 4/8页 |
| 文件大小： | 273K |
| 代理商： | FDN340P |
FDN340P Rev C (W)
Typical Characteristics
0
2
4
6
8
10
0
1
2
3
4
5
QG
-
G
V = -5V
-15V
I = -2A
-10V
0.1
0.2
0.5
1
2
5
10
20
50
100
200
500
1000
2000
-VDS
C
C s
f = 1 MHz
V = 0 V
C ss
C
rss
Figure 7. Gate Charge Characteristics.
Figure 8. Capacitance Characteristics.
0.1
0.2
0.5
-VDS
1
2
5
10
20
50
0.01
0.03
0.1
0.3
1
3
10
30
-
D
RDS(ON) LIMIT
V = -4.5V
SINGLE PULSE
R = 270°C/W
T = 25°C
DC
1s
100ms
10ms
1ms
10s
0
0.01
0.1
1
10
100
10
20
30
40
50
SINGLE PULSE TIME (SEC)
P
SINGLE PULSE
R = 270° C/W
T = 25°C
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum
Power Dissipation.
0.0001
0.001
0.01
0.1
t , TIME (sec)
1
10
100
300
0.001
0.002
0.005
0.01
0.02
0.05
0.1
0.2
0.5
1
T
R (t) = r(t) * R
R = 270 °C/W
Duty Cycle, D = t /t
2
JA
JA
T - T = P * R JA
P(pk)
t
1
t
2
r
Single Pulse
D = 0.5
0.1
0.05
0.02
0.01
0.2
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.
F
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相关代理商/技术参数 |
参数描述 |
|---|---|
| FDN340P | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET P SOT-23 |
| FDN340P_07 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:Single P-Channel, Logic Level, PowerTrench?MOSFET |
| FDN340P-CUT TAPE | 制造商:FAIRCHILD 功能描述:FDN340P Series 20V 70 mOhm Single P-Ch Logic Level PowerTrench Mosfet SSOT-3 |
| FDN342P | 功能描述:MOSFET SSOT-3 P-CH -20V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDN342P | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET |
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