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参数资料
| 型号： | FDN360 |
| 厂商： | Fairchild Semiconductor Corporation |
| 英文描述： | Single P-Channel PowerTrenchTM MOSFET |
| 中文描述： | 单P沟道MOSFET的PowerTrenchTM |
| 文件页数： | 3/8页 |
| 文件大小： | 231K |
| 代理商： | FDN360 |
F
FDN360P Rev. D
Typical Characteristics
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation
with Drain Current and Gate Voltage.
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage
Variation with Source Current
and Temperature.
Figure 3. On-Resistance Variation
with Temperature.
Figure 4. On-Resistance Variation
with Gate-to-Source Voltage.
0.8
0.9
1
1.1
1.2
1.3
-50
-25
0
25
50
75
100
125
150
T
J
, JUNCTION TEMPERATURE (
o
C)
R
D
,
I
D
= -2.0A
V
GS
= -10V
0
4
8
12
16
20
0
1
2
3
4
5
-V
DS
, DRAIN TO SOURCE VOLTAGE (V)
-
D
,
V
GS
= -10V
-6.0V
-4.5V
-4.0V
-3.5V
-3.0V
-5.0V
0.5
1
1.5
2
2.5
0
4
8
12
16
20
-I
D
, DRAIN CURRENT (A)
R
D
,
D
V
GS
= -4.0V
-4.5V
-5.0V
-6.0V
-7.0V
-10V
0
0.05
0.1
0.15
0.2
0.25
2
3
4
5
6
7
8
9
10
-V
GS
, GATE TO SOURCE VOLTAGE (V)
R
D
,
I
D
= -1.0A
T
J
=125
o
C
25
o
C
0
2
4
6
8
10
1
2
3
4
5
-V
GS
, GATE TO SOURCE VOLTAGE (V)
-
D
,
V
DS
= -5V
T
J
=-55
o
C
25
o
C
125
o
C
0.001
0.01
0.1
1
10
100
0.2
0.4
0.6
0.8
1
1.2
1.4
-V
SD
, BODY DIODE VOLTAGE (V)
-
S
,
V
GS
= 0V
T
J
=125
o
C
25
o
C
-55
o
C
相关PDF资料 |
PDF描述 |
|---|---|
| FDN360P | Single P-Channel PowerTrenchTM MOSFET |
| FDN361BN | 30V N-Channel, Logic Level, PowerTrench MOSFET |
| FDN361 | N-Channel, Logic Level, PowerTrenchビヌ |
| FDN361AN | N-Channel, Logic Level, PowerTrenchビヌ |
| FDN371N | 30V N-Channel PowerTrench MOSFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| FDN360P | 功能描述:MOSFET SSOT-3 P-CH -30V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDN360P | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET P SOT-23 |
| FDN360P-CUT TAPE | 制造商:FAIRCHILD 功能描述:FDN360P Series 30 V 80 mOhm Single P-Channel PowerTrench Mosfet - SSOT-3 |
| FDN361 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:N-Channel, Logic Level, PowerTrenchビヌ |
| FDN361AN | 功能描述:MOSFET SSOT-3 N-CH 30V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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