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参数资料
| 型号： | FDN360 |
| 厂商： | Fairchild Semiconductor Corporation |
| 英文描述： | Single P-Channel PowerTrenchTM MOSFET |
| 中文描述： | 单P沟道MOSFET的PowerTrenchTM |
| 文件页数： | 4/8页 |
| 文件大小： | 231K |
| 代理商： | FDN360 |
F
FDN360P Rev. D
Typical Characteristics
(continued)
Figure 7. Gate Charge Characteristics.
Figure 8. Capacitance Characteristics.
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum
Power Dissipation.
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1b.
Transient themal response will change depending on the circuit board design.
0
0.0001
10
20
30
40
50
0.001
0.01
0.1
1
10
100
1000
SINGLE PULSE TIME (SEC)
P
SINGLE PULSE
R
θ
JA
=270
o
C/W
T
A
=25
o
C
0
2
4
6
8
10
0
2
4
6
8
10
Q
g
, GATE CHARGE (nC)
V
G
,
I
D
= -2.0A
V
DS
= -5.0V
-10V
-15V
0
120
240
360
480
600
0
6
12
18
24
30
-V
DS
, DRAIN TO SOURCE VOLTAGE (V)
C
C
iss
C
oss
C
rss
f=1MHz
V
GS
= 0V
0.0001
0.001
0.01
0.1
t , TIME (sec)
1
10
100
300
0.001
0.002
0.005
0.01
0.02
0.05
0.1
0.2
0.5
1
T
R (t) = r(t) * R
R = 270 °C/W
Duty Cycle, D = t /t
2
T - T = P * R JA
P(pk)
t
1
t
2
r
Single Pulse
D = 0.5
0.1
0.05
0.02
0.01
0.2
0.01
0.1
1
10
100
0.1
1
10
100
-V
DS
, DRAIN-SOURCE VOLTAGE (V)
-
D
,
R
DS(ON)
Limit
DC10s
1s
100ms
10ms
1ms
100
μ
s
V
GS
= -10V
SINGLE PULSE
R
θ
JC
=270
o
C/W
T
A
=25
o
C
相关PDF资料 |
PDF描述 |
|---|---|
| FDN360P | Single P-Channel PowerTrenchTM MOSFET |
| FDN361BN | 30V N-Channel, Logic Level, PowerTrench MOSFET |
| FDN361 | N-Channel, Logic Level, PowerTrenchビヌ |
| FDN361AN | N-Channel, Logic Level, PowerTrenchビヌ |
| FDN371N | 30V N-Channel PowerTrench MOSFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| FDN360P | 功能描述:MOSFET SSOT-3 P-CH -30V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDN360P | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET P SOT-23 |
| FDN360P-CUT TAPE | 制造商:FAIRCHILD 功能描述:FDN360P Series 30 V 80 mOhm Single P-Channel PowerTrench Mosfet - SSOT-3 |
| FDN361 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:N-Channel, Logic Level, PowerTrenchビヌ |
| FDN361AN | 功能描述:MOSFET SSOT-3 N-CH 30V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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