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参数资料
| 型号： | FDN361AN |
| 厂商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分类： | 小信号晶体管 |
| 英文描述： | N-Channel, Logic Level, PowerTrenchビヌ |
| 中文描述： | 1800 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封装： | SUPERSOT-3 |
| 文件页数： | 2/8页 |
| 文件大小： | 946K |
| 代理商： | FDN361AN |
F
FDN361AN, Rev. C
DMOS Electrical Characteristics
T
A
= 25
°
C unless otherwise noted
BV
DSS
BV
DSS
T
J
I
DSS
I
GSSF
I
GSSR
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate-Body Leakage, Forward
Gate-Body Leakage, Reverse
V
GS
= 0 V, I
D
= 250
μ
A
I
D
= 250
μ
A, Referenced to 25
°
C
30
V
24
mV/
°
C
V
DS
= 24 V, V
GS
= 0 V
V
GS
= 20 V, V
DS
= 0 V
V
GS
= -20 V, V
DS
= 0 V
1
μ
A
nA
nA
100
-100
V
GS(th)
V
GS(th)
T
J
R
DS(on)
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
Static Drain-Source
On-Resistance
V
DS
= V
GS
, I
D
= 250
μ
A
I
D
= 250
μ
A, Referenced to 25
°
C
1
1.8
-4.2
3
V
mV/
°
C
0.072
0.107
0.105
V
GS
= 10 V, I
D
= 1.8 A
V
GS
= 10 V, I
D
= 1.8 A, T
J
= 125
°
C
V
GS
= 4.5 V, I
D
= 1.4 A
V
GS
= 10 V, V
DS
= 5 V
V
DS
= 10 V, I
D
= 1.8 A
0.1
0.16
0.15
I
D(on)
g
FS
Dynamic Characteristics
On-State Drain Current
Forward Transconductance
8
A
S
5
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V
DS
= 15 V, V
GS
= 0 V, f = 1.0 MHz
220
50
20
pF
pF
pF
t
d(on)
t
t
d(off)
t
f
Q
g
Q
gs
Q
gd
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V
DD
= 15 V, I
D
= 1 A,
V
GS
= 10 V, R
GEN
= 6.0
3
11
7
3
2.1
0.8
0.7
6
22
14
6
4
ns
ns
ns
ns
nC
nC
nC
V
DS
= 15 V, I
D
= 1.8 A,
V
GS
= 5 V
I
S
V
SD
Maximum Continuous Drain-Source Diode Forward Current
Drain-Source Diode Forward
Voltage
0.42
1.2
A
V
V
GS
= 0 V, I
S
= 0.42 A
(Note 2)
0.75
Switching Characteristics
(Note 2)
Off Characteristics
On Characteristics
(Note 2)
Drain-Source Diode Characteristics and Maximum Ratings
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Notes:
1.
R
JA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting
surface of the drain pins. R
θ
JC
is guaranteed by design while R
θ
JA
is determined by the user's board design.
Scale 1 : 1 on letter size paper
2.
Pulse Test: Pulse Width
≤
300
μ
s, Duty Cycle
≤
2.0%
a) 250
°
C/W when mounted
on a 0.02 in
2
pad of 2 oz. Cu.
b) 270
°
C/W when mounted
on a mininum pad.
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相关代理商/技术参数 |
参数描述 |
|---|---|
| FDN361AN | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET N SOT-23 |
| FDN361AN | 制造商:Fairchild Semiconductor Corporation 功能描述:Transistors MOSFET RoHS Compliant:Yes |
| FDN361BN | 功能描述:MOSFET 30V N-Ch LogicLevel PowerTrench MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDN363N | 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:Fairchild Semiconductor Corporation 功能描述: |
| FDN371N | 功能描述:MOSFET 20V N-Ch PowerTrench RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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