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参数资料
| 型号： | FDN361BN |
| 厂商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 30V N-Channel, Logic Level, PowerTrench MOSFET |
| 中文描述： | 1400 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封装： | SOT-23, 3 PIN |
| 文件页数： | 3/5页 |
| 文件大小： | 103K |
| 代理商： | FDN361BN |
FDN361BN Rev A(W)
www.fairchildsemi.com
Typical Characteristics
0
1
2
3
4
5
0
0.5
1
1.5
2
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
I
D
,
V
GS
= 10V
3.5V
6.0V
4.5V
3.0V
0.8
1
1.2
1.4
1.6
1.8
2
2.2
2.4
2.6
2.8
0
1
2
3
4
5
I
D
, DRAIN CURRENT (A)
R
D
,
D
V
GS
= 3.5V
10V
4.0V
6.0V
5.0V
4.5V
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
0.6
0.8
1
1.2
1.4
1.6
-50
-25
0
25
50
75
100
125
150
T
J
, JUNCTION TEMPERATURE (
o
C)
R
D
,
I
D
= 1.4A
V
GS
= 10V
0.075
0.1
0.125
0.15
0.175
0.2
0.225
0.25
3
4
5
6
7
8
9
10
V
GS
, GATE TO SOURCE VOLTAGE (V)
R
D
,
I
D
= 0.7A
T
A
= 125
o
C
T
A
= 25
o
C
Figure 3. On-Resistance Variation with
Temperature.
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
0
1
2
3
4
5
2
2.5
3
3.5
4
V
GS
, GATE TO SOURCE VOLTAGE (V)
I
D
,
T
A
= 125
o
C
25
o
C
-55
o
C
V
DS
= 5V
0.0001
0.001
0.01
0.1
1
10
0
0.2
0.4
0.6
0.8
1
1.2
V
SD
,
BODY DIODE FORWARD VOLTAGE (V)
I
S
,
V
GS
= 0V
T
A
= 125
o
C
25
o
C
-55
o
C
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
F
M
相关PDF资料 |
PDF描述 |
|---|---|
| FDN361 | N-Channel, Logic Level, PowerTrenchビヌ |
| FDN361AN | N-Channel, Logic Level, PowerTrenchビヌ |
| FDN371N | 30V N-Channel PowerTrench MOSFET |
| FDN372S | 30V N-Channel PowerTrench剖 SyncFET |
| FDN5618 | 60V P-Channel Logic Level PowerTrench MOSFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| FDN363N | 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:Fairchild Semiconductor Corporation 功能描述: |
| FDN371N | 功能描述:MOSFET 20V N-Ch PowerTrench RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDN372S | 功能描述:MOSFET 30V N-Ch PowerTrench RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDN372S_F095 | 制造商:Fairchild 功能描述:30V/16V, 40/50MO, NCH, SYNCFET |
| FDN372S_Q | 功能描述:MOSFET 30V N-Ch PowerTrench RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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