参数资料
型号: FDN5618P
厂商: Fairchild Semiconductor
文件页数: 4/5页
文件大小: 0K
描述: MOSFET P-CH 60V 1.25A SSOT3
产品培训模块: High Voltage Switches for Power Processing
产品变化通告: Wire Bonding Change 07/Nov/2008
Mold Compound Change 08/April/2008
产品目录绘图: SuperSOT-3, SOT-23
标准包装: 1
系列: PowerTrench®
FET 型: MOSFET P 通道,金属氧化物
FET 特点: 逻辑电平门
漏极至源极电压(Vdss): 60V
电流 - 连续漏极(Id) @ 25° C: 1.25A
开态Rds(最大)@ Id, Vgs @ 25° C: 170 毫欧 @ 1.25A,10V
Id 时的 Vgs(th)(最大): 3V @ 250µA
闸电荷(Qg) @ Vgs: 13.8nC @ 10V
输入电容 (Ciss) @ Vds: 430pF @ 30V
功率 - 最大: 460mW
安装类型: 表面贴装
封装/外壳: TO-236-3,SC-59,SOT-23-3
供应商设备封装: 3-SSOT
包装: 标准包装
产品目录页面: 1602 (CN2011-ZH PDF)
其它名称: FDN5618PDKR
Typical Characteristics
10
700
8
6
I D = -1.25A
V DS = -20V
-40V
-30V
600
500
400
C ISS
f = 1MHz
V GS = 0 V
4
300
200
2
0
100
0
C OSS
C RSS
0
2
4
6
8
10
0
2
4
6
8
10
12
Q g , GATE CHARGE (nC)
Figure 7. Gate Charge Characteristics.
-V DS , DRAIN TO SOURCE VOLTAGE (V)
Figure 8. Capacitance Characteristics.
100
20
SINGLE PULSE
R θ JA = 270°C/W
10
R DS(ON) LIMIT
1ms
15
T A = 25°C
1
0.1
V GS =-10V
DC
10s
1s
10ms
100ms
10
T A = 25 C
0.01
0.001
SINGLE PULSE
R θ JA = 270 o C/W
o
5
0
0.1
1
10
100
0.001
0.01
0.1
1
10
100
1000
-V DS , DRAIN-SOURCE VOLTAGE (V)
Figure 9. Maximum Safe Operating Area.
t 1 , TIME (sec)
Figure 10. Single Pulse Maximum
Power Dissipation.
1
D = 0.5
0.2
R θ JA (t) = r(t) + R θ JA
0.1
0.1
0.05
R θ JA = 270 °C/W
0.01
0.02
0.01
SINGLE PULSE
P(pk)
t 1
t 2
T J - T A = P * R θ JA (t)
Duty Cycle, D = t 1 / t 2
0.001
0.0001
0.001
0.01
0.1
1
10
100
1000
t 1 , TIME (sec)
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1b.
Transient thermal response will change depending on the circuit board design.
FDN5618P Rev C(W)
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相关代理商/技术参数
参数描述
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