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参数资料
| 型号： | FDP120AN15A0 |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 4/12页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 150V 14A TO-220AB |
| 标准包装： | 400 |
| 系列： | PowerTrench® |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 150V |
| 电流 - 连续漏极(Id) @ 25° C： | 14A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 120 毫欧 @ 4A，10V |
| Id 时的 Vgs(th)（最大）： | 4V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 14.5nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 770pF @ 25V |
| 功率 - 最大： | 65W |
| 安装类型： | 通孔 |
| 封装/外壳： | TO-220-3 |
| 供应商设备封装： | TO-220AB |
| 包装： | 管件 |
Typical Characteristics T C = 25°C unless otherwise noted
100
10
10 μ s
100 μ s
1ms
50
10
If R = 0
t AV = (L)(I AS )/(1.3*RATED BV DSS - V DD )
If R ≠ 0
t AV = (L/R)ln[(I AS *R)/(1.3*RATED BV DSS - V DD ) +1]
STARTING T J = 25 o C
1
0.1
1
OPERATION IN THIS
AREA MAY BE
LIMITED BY r DS(ON)
10ms
SINGLE PULSE DC
T J = MAX RATED
T C = 25 o C
10
V DS , DRAIN TO SOURCE VOLTAGE (V)
100
200
1
0.01
STARTING T J = 150 o C
0.1
t AV , TIME IN AVALANCHE (ms)
1
Figure 5. Forward Bias Safe Operating Area
NOTE: Refer to Fairchild Application Notes AN7514 and AN7515
Figure 6. Unclamped Inductive Switching
Capability
30
25
PULSE DURATION = 80 μ s
DUTY CYCLE = 0.5% MAX
V DD = 15V
30
25
PULSE DURATION = 80 μ s
DUTY CYCLE = 0.5% MAX
T C = 25 o C
V GS = 10V
V GS = 7V
20
15
20
15
V GS = 6V
10
T J = 25 o C
10
5
T J = 175 o C
T J = -55 o C
5
V GS = 5V
0
3
4 5
V GS , GATE TO SOURCE VOLTAGE (V)
0
0
1 3 4
V DS , DRAIN TO SOURCE VOLTAGE (V)
Figure 7. Transfer Characteristics
Figure 8. Saturation Characteristics
140
PULSE DURATION = 80 μ s
DUTY CYCLE = 0.5% MAX
2.5
PULSE DURATION = 80 μ s
DUTY CYCLE = 0.5% MAX
130
120
V GS = 6V
2.0
1.5
110
100
V GS = 10V
1.0
90
0
3
I D , DRAIN CURRENT (A)
12
15
0.5
-80
-40
V GS = 10V, I D = 4A
0 40 80 120 160
T J , JUNCTION TEMPERATURE ( o C)
200
Figure 9. Drain to Source On Resistance vs Drain
Current
Figure 10. Normalized Drain to Source On
Resistance vs Junction Temperature
? 20 02 Fairchild Semiconductor Corporation
FDD120AN15A0 Rev. C2
4
www.fairchildsemi.com
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