参数资料
型号: FDP16AN08A0
厂商: Fairchild Semiconductor
文件页数: 4/11页
文件大小: 0K
描述: MOSFET N-CH 75V 58A TO-220AB
产品培训模块: High Voltage Switches for Power Processing
标准包装: 400
系列: PowerTrench®
FET 型: MOSFET N 通道,金属氧化物
FET 特点: 标准
漏极至源极电压(Vdss): 75V
电流 - 连续漏极(Id) @ 25° C: 58A
开态Rds(最大)@ Id, Vgs @ 25° C: 16 毫欧 @ 58A,10V
Id 时的 Vgs(th)(最大): 4V @ 250µA
闸电荷(Qg) @ Vgs: 42nC @ 10V
输入电容 (Ciss) @ Vds: 1857pF @ 25V
功率 - 最大: 135W
安装类型: 通孔
封装/外壳: TO-220-3
供应商设备封装: TO-220AB
包装: 管件
其它名称: FDP16AN08A0-ND
FDP16AN08A0FS
Typical Characteristics T C = 25°C unless otherwise noted
500
100
10 μ s
100
If R = 0
t AV = (L)(I AS )/(1.3*RATED BV DSS - V DD )
If R ≠ 0
t AV = (L/R)ln[(I AS *R)/(1.3*RATED BV DSS - V DD ) +1]
100 μ s
10
OPERATION IN THIS
AREA MAY BE
LIMITED BY r DS(ON)
1ms
10ms
10
STARTING T J = 25 o C
1
0.1
1
DC
SINGLE PULSE
T J = MAX RATED
T C = 25 o C
10
V DS , DRAIN TO SOURCE VOLTAGE (V)
100
1
0.01
STARTING T J = 150 o C
0.1 1 10
t AV , TIME IN AVALANCHE (ms)
100
Figure 5. Forward Bias Safe Operating Area
NOTE: Refer to Fairchild Application Notes AN7514 and AN7515
Figure 6. Unclamped Inductive Switching
Capability
100
75
50
PULSE DURATION = 80 μ s
DUTY CYCLE = 0.5% MAX
V DD = 15V
100
75
50
V GS = 20V
V GS = 6V
V GS = 10 V
V GS = 7V
T J = 175 o C
T J = 25 C
25
o
T J = -55 o C
25
V GS = 5V
PULSE DURATION = 80 μ s
DUTY CYCLE = 0.5% MAX
T C = 25 o C
0
3.0
3.5
4.0 4.5 5.0 5.5 6.0
V GS , GATE TO SOURCE VOLTAGE (V)
6.5
0
0
1 3
V DS , DRAIN TO SOURCE VOLTAGE (V)
4
Figure 7. Transfer Characteristics
Figure 8. Saturation Characteristics
0.022
2.5
PULSE DURATION = 80 μ s
DUTY CYCLE = 0.5% MAX
0.020
V GS = 6V
2.0
0.018
1.5
0.016
0.014
V GS = 10V
1.0
0.012
0
1 0
20 3 0 40
I D , DRAIN CURRENT (A)
5 0
60
0.5
-80
-40
V GS = 10V, I D =58A
0 40 80 120 160
T J , JUNCTION TEMPERATURE ( o C)
200
Figure 9. Drain to Source On Resistance vs Drain
Current
Figure 10. Normalized Drain to Source On
Resistance vs Junction Temperature
? 200 2 Fairchild Semiconductor Corporation
FDP16AN08A0 Rev. C2
4
www.fairchildsemi.com
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