参数资料
型号: FDP16AN08A0
厂商: Fairchild Semiconductor
文件页数: 7/11页
文件大小: 0K
描述: MOSFET N-CH 75V 58A TO-220AB
产品培训模块: High Voltage Switches for Power Processing
标准包装: 400
系列: PowerTrench®
FET 型: MOSFET N 通道,金属氧化物
FET 特点: 标准
漏极至源极电压(Vdss): 75V
电流 - 连续漏极(Id) @ 25° C: 58A
开态Rds(最大)@ Id, Vgs @ 25° C: 16 毫欧 @ 58A,10V
Id 时的 Vgs(th)(最大): 4V @ 250µA
闸电荷(Qg) @ Vgs: 42nC @ 10V
输入电容 (Ciss) @ Vds: 1857pF @ 25V
功率 - 最大: 135W
安装类型: 通孔
封装/外壳: TO-220-3
供应商设备封装: TO-220AB
包装: 管件
其它名称: FDP16AN08A0-ND
FDP16AN08A0FS
PSPICE Electrical Model
It 8 17 1
9
20
13
ESLC
21
.SUBCKTFDB16AN08A0 213;revMarch2002
Ca 12 8 10e-10
Cb 15 14 8e-10
Cin 6 8 1.7e-9
Dbody 7 5 DbodyMOD
Dbreak 5 11 DbreakMOD
Dplcap 10 5 DplcapMOD
Ebreak 11 7 17 18 85.40
Eds 14 8 5 8 1
Egs 13 8 6 8 1
Esg 6 10 6 8 1
Evthres 6 21 19 8 1
Evtemp 20 6 18 22 1 LGATE
GATE
1
RLGATE
Lgate 1 9 5.96e-9
Ldrain 2 5 1.0e-9
Lsource 3 7 5.75e-9
RLgate 1 9 59.6
RLdrain 2 5 10
RLsource 3 7 57.5
-
ESG
+
EVTEMP
RGATE + 18 -
22
S1A
1 2
8
6
8
DPLCAP
10
RSLC2
EVTHRES
+ 19 -
8
6
CIN
S2A
14 15
13
5
RSLC1
51
5
51
50
RDRAIN
16
MMED
MSTRO
8
DBREAK
11
+
17
EBREAK 18
-
MWEAK
7
RSOURCE
RBREAK
17
LDRAIN
RLDRAIN
DBODY
LSOURCE
RLSOURCE
18
DRAIN
2
SOURCE
3
Mmed 16 6 8 8 MmedMOD
Mstro 16 6 8 8 MstroMOD
Mweak 16 21 8 8 MweakMOD
Rbreak 17 18 RbreakMOD 1
Rdrain 50 16 RdrainMOD 3.3e-3
Rgate 9 20 3.31
RSLC1 5 51 RSLCMOD 1e-6
RSLC2 5 50 1e3
Rsource 8 7 RsourceMOD 7e-3
Rvthres 22 8 RvthresMOD 1
Rvtemp 18 19 RvtempMOD 1
S1a 6 12 13 8 S1AMOD
S1b 13 12 13 8 S1BMOD
S2a 6 15 14 13 S2AMOD
S2b 13 15 14 13 S2BMOD
CA
S1B
13
+
EGS
-
6
8
S2B
CB
+
EDS
-
5
8
14
8
IT
RVTHRES
RVTEMP
19
-
VBAT
+
22
Vbat 22 19 DC 1
ESLC 51 50 VALUE={(V(5,51)/ABS(V(5,51)))*(PWR(V(5,51)/(1e-6*200),3))}
.MODEL DbodyMOD D (IS=2.4E-11 N=1.08 RS=3.3e-3 TRS1=2.2e-3 TRS2=2.5e-9
+ CJO=1.2e-9 M=5.6e-1 TT=1.3e-8 XTI=3.9)
.MODEL DbreakMOD D (RS=1.5e-1 TRS1=1e-3 TRS2=-8.9e-6)
.MODEL DplcapMOD D (CJO=5e-10 IS=1e-30 N=10 M=0.52)
.MODEL MmedMOD NMOS (VTO=3.2 KP=4 IS=1e-30 N=10 TOX=1 L=1u W=1u RG=3.31)
.MODEL MstroMOD NMOS (VTO=3.85 KP=70 IS=1e-30 N=10 TOX=1 L=1u W=1u)
.MODEL MweakMOD NMOS (VTO=2.7 KP=0.06 IS=1e-30 N=10 TOX=1 L=1u W=1u RG=3.31e+1 RS=0.1)
.MODEL RbreakMOD RES (TC1=9e-4 TC2=-5e-7)
.MODEL RdrainMOD RES (TC1=1.9e-2 TC2=4e-5)
.MODEL RSLCMOD RES (TC1=1.5e-3 TC2=3e-5)
.MODEL RsourceMOD RES (TC1=1e-3 TC2=1e-6)
.MODEL RvthresMOD RES (TC1=-5.3e-3 TC2=-1.3e-5)
.MODEL RvtempMOD RES (TC1=-2.7e-3 TC2=1e-6)
MODEL S1AMOD VSWITCH (RON=1e-5 ROFF=0.1 VON=-4 VOFF=-1.5)
.MODEL S1BMOD VSWITCH (RON=1e-5 ROFF=0.1 VON=-1.5 VOFF=-4)
.MODEL S2AMOD VSWITCH (RON=1e-5 ROFF=0.1 VON=-1 VOFF=.5)
.MODEL S2BMOD VSWITCH (RON=1e-5 ROFF=0.1 VON=.5 VOFF=-1)
.ENDS
Note: For further discussion of the PSPICE model, consult A New PSPICE Sub-Circuit for the Power MOSFET Featuring Global
Temperature Options ; IEEE Power Electronics Specialist Conference Records, 1991, written by William J. Hepp and C. Frank
Wheatley.
? 200 2 Fairchild Semiconductor Corporation
FDP16AN08A0 Rev. C2
7
www.fairchildsemi.com
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