参数资料
型号: FDP39N20
厂商: Fairchild Semiconductor
文件页数: 4/10页
文件大小: 0K
描述: MOSFET N-CH 200V 39A TO-220
产品目录绘图: MOSFET TO-220 Pkg
标准包装: 1,000
系列: UniFET™
FET 型: MOSFET N 通道,金属氧化物
FET 特点: 标准
漏极至源极电压(Vdss): 200V
电流 - 连续漏极(Id) @ 25° C: 39A
开态Rds(最大)@ Id, Vgs @ 25° C: 66 毫欧 @ 19.5A,10V
Id 时的 Vgs(th)(最大): 5V @ 250µA
闸电荷(Qg) @ Vgs: 49nC @ 10V
输入电容 (Ciss) @ Vds: 2130pF @ 25V
功率 - 最大: 251W
安装类型: 通孔
封装/外壳: TO-220-3
供应商设备封装: TO-220
包装: 管件
Typical Performance Characteristics (Continued)
Figure 7. Breakdown Voltage Variation
vs. Temperature
1.2
Figure 8. On-Resistance Variation
vs. Temperature
3.0
2.5
1.1
2.0
1.0
1.5
1.0
0.9
* Notes :
1. V GS = 0 V
2. I D = 250 μ A
0.5
* Notes :
1. V GS = 10 V
2. I D = 19.5 A
0.8
-100
-50
0
50
100
150
200
0.0
-100
-50
0
50
100
150
200
T J , Junction Temperature [ C]
T J , Junction Temperature [ C]
o
Figure 9-1. Maximum Safe Operating Area
- FDP39N20
o
Figure 9-2. Maximum Safe Operating Area
- FDPF39N20
10
10
10
10
2
1
1 ms
10 ms
100 ms
100 μ s
10 μ s
2
1
10 μ s
100 μ s
1 ms
10 ms
10
10
10
1. T C = 25 C
2. T J = 150 C
10
1. T C = 25 C
2. T J = 150 C
0
-1
Operation in This Area
is Limited by R DS(on)
DC
* Notes :
o
o
3. Single Pulse
0
-1
Operation in This Area
is Limited by R DS(on)
100 ms
DC
* Notes :
o
o
3. Single Pulse
10
10
10
10
10
10
10
10
-2
0
1
2
-2
0
1
2
V DS , Drain-Source Voltage [V]
Figure 10. Maximum Drain Current vs. Case Temperature
40
30
20
10
V DS , Drain-Source Voltage [V]
0
25
50
75
100
125
150
T C , Case Temperature [ C]
o
?2007 Fairchild Semiconductor Corporation
FDP39N20 / FDPF39N20 Rev. C1
4
www.fairchildsemi.com
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