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参数资料
| 型号： | FDP75N08 |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 2/8页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 75V 75A TO-220 |
| 产品变化通告： | Specifications Change 26/June/2007 |
| 标准包装： | 50 |
| 系列： | UniFET™ |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 75V |
| 电流 - 连续漏极(Id) @ 25° C： | 75A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 11 毫欧 @ 37.5A，10V |
| Id 时的 Vgs(th)（最大）： | 4V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 104nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 4468pF @ 25V |
| 功率 - 最大： | 137W |
| 安装类型： | 通孔 |
| 封装/外壳： | TO-220-3 |
| 供应商设备封装： | TO-220 |
| 包装： | 管件 |
Package Marking and Ordering Information
Device Marking
FDP75N08A
Device
FDP75N08A
Package
TO-220
Reel Size
Tube
Tape Width
N/A
Quantity
50 units
Electrical Characteristics
TC = 25°C unless otherwise noted.
Symbol
Parameter
Test Conditions
Min .
Typ .
Max .
Unit
Off Characteristics
BV DSS
? BV DSS
/ ? T J
I DSS
I GSSF
I GSSR
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature Coefficient
Zero Gate Voltage Drain Current
Gate-Body Leakage Current, Forward
Gate-Body Leakage Current, Reverse
V GS = 0 V, I D = 250 μ A
I D = 250 μ A, Referenced to 25°C
V DS = 75 V, V GS = 0 V
V DS = 60 V, T C = 125°C
V GS = 20 V, V DS = 0 V
V GS = -20 V, V DS = 0 V
75
--
--
--
--
--
--
0.6
--
--
--
--
--
--
1
10
100
-100
V
V/°C
μ A
μ A
nA
nA
On Characteristics
V GS(th)
R DS(on)
g FS
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transconductance
V DS = V GS , I D = 250 μ A
V GS = 10 V, I D = 37.5 A
V DS = 40 V, I D = 37.5 A
2.0
--
--
--
9.4
15
4.0
11
--
V
m ?
S
Dynamic Characteristics
C iss
C oss
C rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V DS = 25 V, V GS = 0 V,
f = 1.0 MHz
--
--
--
3437
738
86
4468
959
129
pF
pF
pF
Switching Characteristics
t d(on)
t r
t d(off)
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
V DD = 37.5 V, I D = 75A,
R G = 25 ?
--
--
--
43
212
273
95
434
556
ns
ns
ns
(Note 4)
t f
Turn-Off Fall Time
--
147
303
ns
Q g
Q gs
Q gd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V DS = 60 V, I D = 75A,
V GS = 10 V
(Note 4)
--
--
--
80
20
24
104
--
--
nC
nC
nC
Drain-Source Diode Characteristics and Maximum Ratings
I S
I SM
Maximum Continuous Drain-Source Diode Forward Current
Maximum Pulsed Drain-Source Diode Forward Current
--
--
--
--
75
300
A
A
V SD
t rr
Q rr
Drain-Source Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
V GS = 0 V, I S = 75 A
V GS = 0 V, I S = 75 A,
dI F / dt = 100 A/ μ s
--
--
--
--
62
145
1.4
--
--
V
ns
nC
Notes:
1: Repetitive r ating: p ulse - width limited by maximum junction temperature .
2: L = 206 μH , I AS = 75 A, V DD = 50 V, R G = 25 ? , s tarting T J = 25°C .
3: I SD ≤ 75 A, di/dt ≤ 200A/ μ s, V DD ≤ BV DSS , s tarting T J = 25°C .
4: Essentially i ndependent of o perating t emperature t ypical c haracteristics .
?2006 Fairchild Semiconductor Corporation
FDP75N08A Rev. C0
2
www.fairchildsemi.com
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相关代理商/技术参数 |
参数描述 |
|---|---|
| FDP75N08_0606 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:75V N-Channel MOSFET |
| FDP75N08A | 功能描述:MOSFET 75V N-Channel MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDP79N15 | 功能描述:MOSFET 150V NCH MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDP79N15_07 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:150V N-Channel MOSFET |
| FDP7N50 | 功能描述:MOSFET 500V N-CHANNEL RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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