- 您现在的位置：买卖IC网 > Datasheet目录424 > FDP8860 (Fairchild Semiconductor)MOSFET N-CH 30V 80A TO-220AB Datasheet资料下载
参数资料
| 型号： | FDP8860 |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 2/6页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 30V 80A TO-220AB |
| 产品目录绘图： | MOSFET TO-220AB |
| 标准包装： | 50 |
| 系列： | PowerTrench® |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 30V |
| 电流 - 连续漏极(Id) @ 25° C： | 80A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 2.5 毫欧 @ 80A，10V |
| Id 时的 Vgs(th)（最大）： | 2.5V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 222nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 12240pF @ 15V |
| 功率 - 最大： | 254W |
| 安装类型： | 通孔 |
| 封装/外壳： | TO-220-3 |
| 供应商设备封装： | TO-220AB |
| 包装： | 管件 |
| 产品目录页面： | 1605 (CN2011-ZH PDF) |
Electrical Characteristics T J = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BV DSS
? BV DS S
? T J
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
I D = 1mA, V GS = 0V
I D = 1mA, referenced to 25°C
30
22
V
mV/° C
I DSS
I GSS
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
V DS = 24V,
V GS = 0V
V GS = ±20V
T J = 150°C
1
250
±100
μ A
nA
On Characteristics
V GS(th)
? V GS(th )
? T J
Gate to Source Threshold Voltage
Gate to Source Threshold Voltage
Temperature Coefficient
V GS = V DS , I D = 250 μ A
I D = 250 μ A, referenced to 25°C
1
1.6
-9.6
2.5
V
mV/°C
V GS = 10V, I D = 80A
1.9
2.5
r DS(on)
Drain to Source On Resistance
V GS = 5V, I D = 80A
V GS = 4.5V, I D = 80A
2.0
2.1
2.8
2.9
m ?
V GS = 10V, I D = 80A, T J = 150°C
2.9
3.8
g FS
Forward Transconductance
V DS = 10V, I D = 80A
3.4
S
Dynamic Characteristics
C iss
C oss
C rss
R g
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
V DS = 15V, V GS = 0V,
f = 1MHz
f = 1MHz
9200
1700
1060
1.7
12240
2260
1590
pF
pF
pF
?
Switching Characteristics
t d(on)
t r
t d(off)
t f
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
V DD = 15V, I D = 80A
V GS = 5V, R GEN = 3 ?
35
135
64
59
56
216
103
95
ns
ns
ns
ns
Q g(TOT)
Q g(5)
Q gs
Total Gate Charge at 10V
Total Gate Charge at 5V
Gate to Source Gate Charge
V GS = 0V to 10V
V GS = 0V to 5V
V DD = 15V
I D = 80A
158
81
27
222
114
nC
nC
nC
Q gd
Gate to Drain “Miller” Charge
33
nC
Drain-Source Diode Characteristics
V SD
t rr
Q rr
Source to Drain Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
V GS = 0V, I S = 80A
V GS = 0V, I S = 40A
I F = 80A, di/dt = 100A/ μ s
0.88
0.81
60
74
1.25
1.2
90
111
V
ns
nC
Notes:
1: Pulse Test: Pulse Width < 80 μ s, Duty cycle < 0.5%.
2: Starting T J =25 o C, L= 0.3mH, I AS = 67A,V DD = 27V, V GS = 10V.
FDP8860 Rev.B
2
www.fairchildsemi.com
相关PDF资料 |
PDF描述 |
|---|---|
| FDP8870_F085 | MOSFET N-CH 30V 156A TO-220 |
| FDP8874 | MOSFET N-CH 30V 114A TO-220AB |
| FDP8876 | MOSFET N-CH 30V 70A TO-220 |
| FDP8880 | MOSFET N-CH 30V 54A TO-220AB |
| FDP8896 | MOSFET N-CH 30V 92A TO-220AB |
相关代理商/技术参数 |
参数描述 |
|---|---|
| FDP8870 | 功能描述:MOSFET 30V N-Channel PowerTrench RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDP8870_08 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:N-Channel PowerTrench㈢ MOSFET |
| FDP8870_10 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:N-Channel PowerTrench?? MOSFET 30V, 156A, 4.1mW |
| FDP8870_F085 | 功能描述:MOSFET 30V/156A/4.1Mohm/NCH POWERTRENCH RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDP8874 | 功能描述:MOSFET 30V 114A 5.3 OHM N-CH RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
发布紧急采购，3分钟左右您将得到回复。