- 您现在的位置：买卖IC网 > PDF目录375780 > FDP8876 (FAIRCHILD SEMICONDUCTOR CORP) N-Channel PowerTrench MOSFET PDF资料下载
参数资料
| 型号： | FDP8876 |
| 厂商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分类： | JFETs |
| 英文描述： | N-Channel PowerTrench MOSFET |
| 中文描述： | 70 A, 30 V, 0.0105 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封装： | ROHS COMPLIANT PACKAGE-3 |
| 文件页数： | 2/6页 |
| 文件大小： | 267K |
| 代理商： | FDP8876 |
F
FDP8876 Rev. A
www.fairchildsemi.com
2
Electrical Characteristics
T
A
= 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
B
VDSS
Drain to Source Breakdown Voltage
I
D
= 250
μ
A, V
GS
= 0V
V
DS
= 24V
V
GS
= 0V
V
GS
= ±20V
30
-
-
1
V
μ
A
I
DSS
Zero Gate Voltage Drain Current
T
A
= 150
o
C
-
-
-
-
250
±100
I
GSS
Gate to Source Leakage Current
nA
On Characteristics
V
GS(TH)
Gate to Source Threshold Voltage
V
GS
= V
DS
, I
D
= 250
μ
A
I
D
= 40A, V
GS
= 10V
I
D
= 40A, V
GS
= 4.5V
I
D
= 40, V
GS
= 10V,
T
A
= 175
o
C
1.2
-
-
-
2.5
8.7
10.5
V
r
DS(ON)
Drain to Source On Resistance
6.1
7.7
m
-
11
14
Dynamic Characteristics
C
ISS
C
OSS
C
RSS
R
G
Q
g(TOT)
Q
g(5)
Q
g(TH)
Q
gs
Q
gs2
Q
gd
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge at 10V
Total Gate Charge at 5V
Threshold Gate Charge
Gate to Sourse Gate Charge
Gate Charge Threshold to Plateau
Gate to Drain “Miller” Charge
V
DS
= 15V, V
GS
= 0V,
f = 1MHz
-
-
-
-
-
-
-
-
-
-
1700
340
210
2.3
32
17
1.6
4.7
3.1
7.0
-
-
-
-
pF
pF
pF
nC
nC
nC
nC
nC
nC
V
GS
=0.5V, f = 1MHz
V
GS
= 0V to 10VV
DD
= 15V
V
GS
= 0V to 5V
V
GS
= 0V to 1V
I
D
= 40A
I
g
= 1.0mA
45
24
2.4
-
-
-
Switching Characteristics
(V
GS
= 10V)
t
ON
Turn-On Time
t
d(ON)
Turn-On Delay Time
t
r
Rise Time
t
d(OFF)
Turn-Off Delay Time
t
f
Fall Time
t
OFF
Turn-Off Time
V
DD
= 15V, I
D
= 40A
V
GS
= 10V, R
GS
= 10
-
-
-
-
-
-
-
9
189
-
-
-
-
135
ns
ns
ns
ns
ns
ns
97
51
39
-
Drain-Source Diode Characteristic
V
SD
Source to Drain Diode Voltage
I
SD
= 40A
I
SD
= 3.2A
I
SD
= 40A, dI
SD
/dt=100A/
μ
s
I
SD
= 40A, dI
SD
/dt=100A/
μ
s
-
-
-
-
-
-
-
-
1.25
1.0
22
9
V
V
ns
nC
t
rr
Q
RR
Reverse Recovery Time
Reverse Recovered Charge
Notes:
1: Starting T
J
=25
O
C,L=1mH,I
AS
=19A,V
DD
=27V,V
GS
=10V
2: Pulse width=100s
相关PDF资料 |
PDF描述 |
|---|---|
| FDP8878 | N-Channel Logic Level PowerTrench MOSFET 30V, 40A, 15m Ohm |
| FDP8896 | N-Channel PowerTrench MOSFET 30V, 92A, 5.9mз |
| FDPF12N35 | 350V N-Channel MOSFET |
| FDPF2710T | Zener Diode; Application: General; Pd (mW): 400; Vz (V): 2.7 to 2.9; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: MHD |
| FDPF33N25 | 250V N-Channel MOSFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| FDP8878 | 功能描述:MOSFET 30V N-Ch LogicLevel PowerTrench MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDP8880 | 功能描述:MOSFET 30V N-Channel PowerTrench MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDP8880_08 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:N-Channel PowerTrench㈢ MOSFET |
| FDP8896 | 功能描述:MOSFET 30V N-Channel PowerTrench RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDP8896_08 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:N-Channel PowerTrench㈢ MOSFET 30V, 92A, 5.9mヘ |
发布紧急采购，3分钟左右您将得到回复。