- 您现在的位置：买卖IC网 > Datasheet目录424 > FDPF12N50NZT (Fairchild Semiconductor)MOSFET N-CH 500V 11.5A TO-220F Datasheet资料下载
参数资料
| 型号： | FDPF12N50NZT |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 2/10页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 500V 11.5A TO-220F |
| 标准包装： | 50 |
| 系列： | UniFET-II™ |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 500V |
| 电流 - 连续漏极(Id) @ 25° C： | 11.5A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 520 毫欧 @ 5.75A，10V |
| Id 时的 Vgs(th)（最大）： | 5V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 30nC @ 400V |
| 输入电容 (Ciss) @ Vds： | 1235pF @ 25V |
| 功率 - 最大： | 42W |
| 安装类型： | 通孔 |
| 封装/外壳： | TO-220-3 整包 |
| 供应商设备封装： | TO-220F |
| 包装： | 管件 |
Package Marking and Ordering Information
Device Marking
FDP12N50NZ
FDPF12N50NZ
Device
FDP12N50NZ
FDPF12N50NZ
Package
TO-220
TO-220F
Reel Size
Tube
Tube
Tape Width
N/A
N/A
Quantity
50 units
50 units
Electrical Characteristics T C = 25 o C unless otherwise noted.
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
Off Characteristics
BV DSS
Drain to Source Breakdown Voltage
I D = 250 ? A, V GS = 0V, T J = 25 o C
500
-
-
V
? BV DSS
/ ? T J
I DSS
I GSS
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Body Leakage Current
I D = 250 ? A, Referenced to
V DS = 500V, V GS = 0V
V DS = 400V, T C = 125 o C
V GS = ±25V, V DS = 0V
25 o C
-
-
-
-
0.5
-
-
-
-
1
10
±10
V/ o C
? A
? A
On Characteristics
V GS(th)
R DS(on)
g FS
Gate Threshold Voltage
Static Drain to Source On Resistance
Forward Transconductance
V GS = V DS , I D = 250 ? A
V GS = 10V, I D = 5.75A
V DS = 20V, I D = 5.75A
3.0
-
-
-
0.46
12
5.0
0.52
-
V
?
S
Dynamic Characteristics
C iss
C oss
C rss
Q g
Q gs
Q gd
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge at 10V
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
V DS = 25V, V GS = 0V
f = 1MHz
V DS = 400V, I D = 11.5A
V GS = 10V
(Note 4)
-
-
-
-
-
-
945
155
14
23
5.5
9.6
1235
205
20
30
-
-
pF
pF
pF
nC
nC
nC
Switching Characteristics
t d(on)
t r
t d(off)
t f
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
V DD = 250V, I D = 11.5A
R G = 25 ?
(Note 4)
-
-
-
-
20
50
60
45
50
110
130
100
ns
ns
ns
ns
Drain-Source Diode Characteristics
I S
I SM
Maximum Continuous Drain to Source Diode Forward Current
Maximum Pulsed Drain to Source Diode Forward Current
-
-
-
-
11.5
46
A
A
V SD
t rr
Q rr
Drain to Source Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
V GS = 0V, I SD = 11.5A
V GS = 0V, I SD = 11.5A
dI F /dt = 100A/ ? s
-
-
-
-
315
2.0
1.4
-
-
V
ns
? C
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. L = 8.5mH, I AS = 11.5A, V DD = 50V, R G = 25 ? , Starting T J = 25 ? C
3. I SD ?? 11.5A, di/dt ? 200A/ ? s, V DD ? BV DSS , Starting T J = 25 ? C
4. Essentially Independent of Operating Temperature Typical Characteristics
?2010 Fairchild Semiconductor Corporation
FDP12N50NZ / FDPF12N50NZ Rev. C1
2
www.fairchildsemi.com
相关PDF资料 |
PDF描述 |
|---|---|
| FDPF12N50T | MOSFET N-CH 500V 11.5A TO-220F |
| FDPF12N50UT | MOSFET N-CH 500V TO-220F-3 |
| FDPF12N60NZ | MOSFET N-CH 600V TO-220F-3 |
| FDPF13N50FT | MOSFET N-CH 500V 12A TO-220F |
| FDPF14N30T | MSOFET N-CH 300V 14A TO-220F |
相关代理商/技术参数 |
参数描述 |
|---|---|
| FDPF12N50T | 功能描述:MOSFET 500V N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDPF12N50UT | 功能描述:MOSFET 500V 10A N-Chan Ultra FRFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDPF12N60NZ | 功能描述:MOSFET UNIFET2 600V N-CH MOSFET SINGLE GAGE RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDPF13N50FT | 功能描述:MOSFET 500V N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDPF13N50FT_12 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:N-Channel MOSFET 500V, 12A, 0.54?? |
发布紧急采购，3分钟左右您将得到回复。