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参数资料
| 型号： | FDPF8N50NZT |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 1/10页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 500V8A TO-220F |
| 标准包装： | 50 |
| 系列： | UniFET™ |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 500V |
| 电流 - 连续漏极(Id) @ 25° C： | 8A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 850 毫欧 @ 4A，10V |
| Id 时的 Vgs(th)（最大）： | 5V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 18nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 7360pF @ 25V |
| 功率 - 最大： | 40.3W |
| 安装类型： | 通孔 |
| 封装/外壳： | TO-220-3 整包 |
| 供应商设备封装： | TO-220F |
| 包装： | 管件 |
October 2013
FDP8N50NZ / FDPF8N50NZ
N-Channel UniFET TM II MOSFET ?
500 V, 8 A, 850 m ?
Features
? R DS(on) = 770 m ? (Typ.) @ V GS = 10 V, I D = 4 A
? Low Gate Charge (Typ. 14 nC)
? Low C rss (Typ. 5 pF)
? 100% Avalanche Tested
? Improve dv/dt Capability
? ESD Improved Capability
? RoHS Compliant
Applications
Description
UniFET TM II MOSFET is Fairchild Semiconductor ’s high voltage
MOSFET family based on advanced planar stripe and DMOS
technology. This advanced MOSFET family has the smallest
on-state resistance among the planar MOSFET, and also
provides superior switching performance and higher avalanche
energy strength. In addition, internal gate-source ESD diode
allows UniFET II MOSFET to withstand over 2kV HBM surge
stress. This device family is suitable for switching power
converter applications such as power factor correction (PFC),
flat panel display (FPD) TV power, ATX and electronic lamp
ballasts.
? LCD/LED TV
? Lighting
? Uninterruptible Power Supply
? AC-DC Power Supply
D
GD
D
S
TO-220
G
S
TO-220F
G
S
MOSFET Maximum Ratings T C = 25 o C unless otherwise noted*
Symbol
V DSS
Drain to Source Voltage
Parameter
FDP8N50NZ FDPF8N50NZ
500
Unit
V
V GSS
I D
Gate to Source Voltage
Drain Current
- Continuous (T C = 25 o C)
- Continuous (T C = 100 o C)
8
4.8
±25
8*
4.8*
V
A
I DM
E AS
I AR
E AR
dv/dt
P D
Drain Current
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation
- Pulsed
(T C = 25 o C)
- Derate above 25 o C
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
32
130
1
122
8
13
10
32*
40.3
0.3
A
mJ
A
mJ
V/ns
W
W/ o C
T J , T STG
T L
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
-55 to +150
300
o C
o C
*Drain current limited by maximum junction temperature
Thermal Characteristics
Symbol
Parameter
FDP8N50NZ FDPF8N50NZ
Unit
R ? JC
R ? JA
Thermal Resistance, Junction to Case, Max.
Thermal Resistance, Junction to Ambient, Max.
0.96
62.5
3.1
62.5
o C/W
?2010 Fairchild Semiconductor Corporation
FDP8N50NZ / FDPF8N50NZ Rev. C2
1
www.fairchildsemi.com
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相关代理商/技术参数 |
参数描述 |
|---|---|
| FDPF8N50NZU | 功能描述:MOSFET 500V N-Channel UniFET-II RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDPF8N50NZU | 制造商:Fairchild Semiconductor Corporation 功能描述:N CH MOSFETUNITFET 500V 6.5A TO-220F 制造商:Fairchild Semiconductor Corporation 功能描述:N CH MOSFET, UNITFET, 500V, 6.5A, TO-220F; Transistor Polarity:N Channel; Continuous Drain Current Id:6.5A; Drain Source Voltage Vds:500V; On Resistance Rds(on):1ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:5V ;RoHS Compliant: No |
| FDPF8N60ZUT | 功能描述:MOSFET 600V 6.5A N-Chan FRFET UniFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDPF9N50NZ | 功能描述:MOSFET N-CH UNIFET2 SINGLE GAGE 500V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDP-M1-D01-HS | 制造商:Fraen Corporation 功能描述:Lens -Medium Beam Lens For Osram Golden Dragon LEDs |
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