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| 型号： | FDPF8N50NZU |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 1/8页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 500V 6.5A TO-220F |
| 产品目录绘图： | MOSFET TO-220F |
| 标准包装： | 50 |
| 系列： | UniFET-II™ |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 500V |
| 电流 - 连续漏极(Id) @ 25° C： | 6.5A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 1.2 欧姆 @ 4A，10V |
| Id 时的 Vgs(th)（最大）： | 5V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 18nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 735pF @ 25V |
| 功率 - 最大： | 40W |
| 安装类型： | 通孔 |
| 封装/外壳： | TO-220-3 整包 |
| 供应商设备封装： | TO-220F |
| 包装： | 管件 |
| 产品目录页面： | 1608 (CN2011-ZH PDF) |
December 2013
FDPF8N50NZU
N-Channel UniFET TM II Ultra FRFET TM MOSFET
500 V, 6.5 A, 1.2 ?
Features
? R DS(on) = 1.0 ? (Typ.) @ V GS = 10 V, I D = 3.2 5 A
? Low G ate C harge (Typ. 14 nC)
? Low C rss (Typ. 5 pF)
? 100% A valanche T ested
? Improved dv/dt Capability
? ESD Improved Capability
? RoHS C ompliant
Applications
? LCD/LED TV
? Lighting
? Uninterruptible Power Supply
? AC-DC Power Supply
Description
UniFET TM II MOSFET is Fairchild Semiconductor’s high voltage
MOSFET family based on advanced planar stripe and DMOS
technology. This advanced MOSFET family has the smallest on-state
resistance among the planar MOSFET, and also provides superior
switching performance and higher avalanche energy strength. In
addition, internal gate-source ESD diode allows UniFET II MOSFET to
withstand over 2kV HBM surge stress. UniFET II Ultra FRFET TM
MOSFET has much superior body diode reverse recovery
performance. Its t rr is less than 50nsec and the reverse dv/dt immunity
is 20V/nsec while normal planar MOSFETs have over 200nsec and
4.5V/nsec respectively. Therefore UniFET II Ultra FRFET MOSFET
can remove additional component and improve system reliability in
certain applications that require performance improvement of the
MOSFET’s body diode. This device family is suitable for switching
power converter applications such as power factor correction (PFC),
flat panel display (FPD) TV power, ATX and electronic lamp ballasts.
D
D
G
S
TO-220F
G
Absolute Maximum Ratings T C = 25 o C unless otherwise noted .
S
Symbol
Parameter
FDPF8N50NZU
Unit
- Continuous (T C = 25 o C)
- Continuous (T C = 100 o C)
(T C = 25 o C)
- Derate A bove 25 o C
T L
C
C
V DSS Drain to Source Voltage
V GSS Gate to Source Voltage
I D Drain Current
I DM Drain Current - Pulsed
E AS Single Pulsed Avalanche Energy
I AR Avalanche Current
E AR Repetitive Avalanche Energy
dv/dt Peak Diode Recovery dv/dt
P D Power Dissipation
T J , T STG Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering,
1/8” from Case for 5 Seconds
*Drain current limited by maximum junction temperature
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
500
±25
6.5*
3.9*
26*
80
6.5
13
20
40
0.32
-55 to +150
300
V
V
A
A
mJ
A
mJ
V/ns
W
W/ o C
o
o
Thermal Characteristics
Symbol
Parameter
FDPF8N50NZU
Unit
R ? JC
R ? CS
R ? JA
Thermal Resistance, Junction to Case , Max.
Thermal Resistance, Case to Sink , Typ.
Thermal Resistance, Junction to Ambient , Max.
3.1
0.5
62.5
o
C/W
?2010 Fairchild Semiconductor Corporation
FDPF8N50NZU Rev C1
1
www.fairchildsemi.com
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相关代理商/技术参数 |
参数描述 |
|---|---|
| FDPF8N50NZU | 制造商:Fairchild Semiconductor Corporation 功能描述:N CH MOSFETUNITFET 500V 6.5A TO-220F 制造商:Fairchild Semiconductor Corporation 功能描述:N CH MOSFET, UNITFET, 500V, 6.5A, TO-220F; Transistor Polarity:N Channel; Continuous Drain Current Id:6.5A; Drain Source Voltage Vds:500V; On Resistance Rds(on):1ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:5V ;RoHS Compliant: No |
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| FDP-N1000 | 制造商:PANASONIC ELECTRIC WORKS - ACSD 功能描述:PROTECT TUBE M4 DIF. FIBER 1M 制造商:PANASONIC INDUSTRIAL AUTOMATION SALES 功能描述:PROTECT TUBE M4 DIF. FIBER 1M 制造商:Panasonic Electric Works 功能描述:PROTECTIVE TUBE FOR M4 DIF. FIBER 1M LE |
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