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参数资料
| 型号： | FDPF8N50NZU |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 2/8页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 500V 6.5A TO-220F |
| 产品目录绘图： | MOSFET TO-220F |
| 标准包装： | 50 |
| 系列： | UniFET-II™ |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 500V |
| 电流 - 连续漏极(Id) @ 25° C： | 6.5A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 1.2 欧姆 @ 4A，10V |
| Id 时的 Vgs(th)（最大）： | 5V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 18nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 735pF @ 25V |
| 功率 - 最大： | 40W |
| 安装类型： | 通孔 |
| 封装/外壳： | TO-220-3 整包 |
| 供应商设备封装： | TO-220F |
| 包装： | 管件 |
| 产品目录页面： | 1608 (CN2011-ZH PDF) |
Package Marking and Ordering Information
Part Number
FDPF8N50NZU
Top Mark
FDPF8N50NZU
Package
TO-220 F
Packing Method
Tube
Reel Size
N/A
Tape Width
N/A
Quantity
50 units
Electrical Characteristics
T C = 25°C unless otherwise noted .
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
Off Characteristics
I D = 250 ? A, Referenced to 25 C
BV DSS
? BV DSS
/ ? T J
I DSS
I GSS
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Body Leakage Current
I D = 250 ? A, V GS = 0V, T C = 25 o C
o
V DS = 500V, V GS = 0V
V DS = 400V, T C = 125 o C
V GS = ±25V, V DS = 0V
500
-
-
-
-
-
0.5
-
-
- ?
-
-
25
250
±10
V
V / o C
? A
? A
On Characteristics
V GS(th)
R DS(on)
g FS
Gate Threshold Voltage
Static Drain to Source On Resistance
Forward Transconductance
V GS = V DS , I D = 250 ? A
V GS = 10V, I D = 4A
V DS = 20V, I D = 4A
3.0
- ?
-
-
1.0
6.3
5.0
1.2
-
V
?
S
Dynamic Characteristics
C iss
C oss
C rss
Q g(tot)
Q gs
Q gd
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge at 10V
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
V DS = 25V, V GS = 0V
f = 1MHz
V DS = 400V,I D = 6.5A
V GS = 10V
(Note 4)
-
-
-
-
-
-
565
80
5
14
4
6
735
105
8
18
-
-
pF
pF
pF
nC
nC
nC
Switching Characteristics
t d(on)
t r
t d(off)
t f
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
V DD = 250V, I D = 6.5A,
V GS = 10V, R G = 25 ?
(Note 4)
-
-
-
-
17
34
43
27
45
80
95
60
ns
ns
ns
ns
Drain-Source Diode Characteristics
I S
I SM
V SD
t rr
Q rr
Maximum Continuous Drain to Source Diode Forward Current
Maximum Pulsed Drain to Source Diode Forward Current
Drain to Source Diode Forward Voltage V GS = 0V, I SD = 6.5A
Reverse Recovery Time V GS = 0V, I SD = 6.5A
Reverse Recovery Charge dI F /dt = 100A/ μ s
-
-
-
-
-
-
-
-
50
0.05
6.5
26
1.6
-
-
A
A
V
ns
? C
Notes:
1. Repetitive r ating: p ulse - width limited by maximum junction temperature .
2. L = 3.8 mH, I AS = 6. 5 A, V DD = 50 V, R G = 25 Ω , s tarting T J = 25 ° C .
3. I SD ≤ 6.5 A, di/dt ≤ 200 A/ μ s, V DD ≤ BV DSS , s tarting T J = 25 ° C .
4. Essentially i ndependent of o perating t emperature t ypical c haracteristics .
?20 10 Fairchild Semiconductor Corporation
FDPF8N50NZU Rev C1
2
www.fairchildsemi.com
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