参数资料
型号: FDPF8N50NZU
厂商: Fairchild Semiconductor
文件页数: 4/8页
文件大小: 0K
描述: MOSFET N-CH 500V 6.5A TO-220F
产品目录绘图: MOSFET TO-220F
标准包装: 50
系列: UniFET-II™
FET 型: MOSFET N 通道,金属氧化物
FET 特点: 标准
漏极至源极电压(Vdss): 500V
电流 - 连续漏极(Id) @ 25° C: 6.5A
开态Rds(最大)@ Id, Vgs @ 25° C: 1.2 欧姆 @ 4A,10V
Id 时的 Vgs(th)(最大): 5V @ 250µA
闸电荷(Qg) @ Vgs: 18nC @ 10V
输入电容 (Ciss) @ Vds: 735pF @ 25V
功率 - 最大: 40W
安装类型: 通孔
封装/外壳: TO-220-3 整包
供应商设备封装: TO-220F
包装: 管件
产品目录页面: 1608 (CN2011-ZH PDF)
Typical Performance Characteristics
Figure 7. Breakdown Voltage Variation
vs. Temp erature
1.2
(Continued)
Figure 8. Maximum Safe Operating Area
10
1.1
1
100 ? s 10 ? s
1 ms
10 ms
10
1.0
0
Operation in This Area
is Limited by R DS(on)
100 ms
DC
T J , Junction Temperature [ C ]
10
10
10
1. T C = 25 C
2. T J = 150 C
10
10
10
0.9
0.8
-100
-50 0 50 100 150
*Notes:
1. V GS = 0V
2. I D = 250 ? A
o
-1
-2
0
?
Notes :
o
o
3. Single Pulse
1 2
V DS , Drain-Source Voltage [V]
3
Figure 9. Maximum Drain Current
????????????? vs. Case Temperature ?????????????????????????????????????
8
7
6
5
4
3
2
1
0
25
50
75
100
125
150
T C , Case Temperature [?C]
Figure 1 0 . Transient Thermal Response Curve
5
0.5
1
0.2
0.1
0.05
P DM
0.1
0.02
0.01
*Notes:
t 1
t 2
1. Z ? JC (t) = 3.1 C/W Max.
Single pulse
o
2. Duty Factor, D= t 1 /t 2
3. T JM - T C = P DM * Z ? JC (t)
10
10
10
10
10
10
10
10
10
0.01
-5
-4
-3
-2
- 1
0
1
2
3
Rectangular Pulse Duration [sec]
?20 10 Fairchild Semiconductor Corporation
FDPF8N50NZU Rev C1
4
www.fairchildsemi.com
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