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参数资料
| 型号： | FDPF8N50NZT |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 2/10页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 500V8A TO-220F |
| 标准包装： | 50 |
| 系列： | UniFET™ |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 500V |
| 电流 - 连续漏极(Id) @ 25° C： | 8A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 850 毫欧 @ 4A，10V |
| Id 时的 Vgs(th)（最大）： | 5V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 18nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 7360pF @ 25V |
| 功率 - 最大： | 40.3W |
| 安装类型： | 通孔 |
| 封装/外壳： | TO-220-3 整包 |
| 供应商设备封装： | TO-220F |
| 包装： | 管件 |
Package Marking and Ordering Information
Device Marking
FDP8N50NZ
FDPF8N50NZ
Device
FDP8N50NZ
FDPF8N50NZ
Package
TO-220
TO-220F
Reel Size
Tube
Tube
Tape Width
N/A
N/A
Quantity
50 units
50 units
Electrical Characteristics T C = 25 o C unless otherwise noted
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
Off Characteristics
BV DSS
Drain to Source Breakdown Voltage
I D = 250 ? A, V GS = 0V, T C = 25 o C
500
-
-
V
? BV DSS
/ ? T J
I DSS
I GSS
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Body Leakage Current
I D = 250 ? A, Referenced to
V DS = 500V, V GS = 0V
V DS = 400V, T C = 125 o C
V GS = ±25V, V DS = 0V
25 o C
-
-
-
-
0.5
-
-
-
-
1
10
±10
V/ o C
? A
? A
On Characteristics
V GS(th)
R DS(on)
g FS
Gate Threshold Voltage
Static Drain to Source On Resistance
Forward Transconductance
V GS = V DS , I D = 250 ? A
V GS = 10V, I D = 4A
V DS = 20V, I D = 4A
3.0
-
-
-
0.77
6.3
5.0
0.85
-
V
?
S
Dynamic Characteristics
C iss
C oss
C rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V DS = 25V, V GS = 0V
f = 1MHz
-
-
-
565
80
5
735
105
8
pF
pF
pF
Q g(tot)
Q gs
Q gd
Total Gate Charge at 10V
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
V DS = 400V,I D = 8A
V GS = 10V
(Note 4)
-
-
-
14
4
6
18
-
-
nC
nC
nC
Switching Characteristics
t d(on)
t r
t d(off)
t f
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
V DD = 250V, I D = 8A
R G = 25 ? , V GS = 10V
(Note 4)
-
-
-
-
17
34
43
27
45
80
95
60
ns
ns
ns
ns
Drain-Source Diode Characteristics
I S
I SM
Maximum Continuous Drain to Source Diode Forward Current
Maximum Pulsed Drain to Source Diode Forward Current
-
-
-
-
8
30
A
A
V SD
t rr
Q rr
Drain to Source Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
V GS = 0V, I SD = 8A
V GS = 0V, I SD = 8A
dI F /dt = 100A/ ? s
-
-
-
-
228
1.43
1.4
-
-
V
ns
? C
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. L = 3.8mH, I AS = 8A, V DD = 50V, R G = 25 ? , Starting T J = 25 ? C
3. I SD ?? 8A, di/dt ? 200A/ ? s, V DD ? BV DSS , Starting T J = 25 ? C
4. Essentially Independent of Operating Temperature Typical Characteristics
?2010 Fairchild Semiconductor Corporation
FDP8N50NZ / FDPF8N50NZ Rev. C2
2
www.fairchildsemi.com
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