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参数资料
| 型号： | FDQ7236AS |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 3/9页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 30V DUAL PS 14-SOIC |
| 标准包装： | 2,500 |
| 系列： | PowerTrench® |
| FET 型： | 2 个 N 沟道（双） |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 30V |
| 电流 - 连续漏极(Id) @ 25° C： | 14A，11A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 8.7 毫欧 @ 14A，10V |
| Id 时的 Vgs(th)（最大）： | 3V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 24nC @ 15V |
| 输入电容 (Ciss) @ Vds： | 920pF @ 15V |
| 功率 - 最大： | 1.3W，1.1W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 14-SOIC（0.154"，3.90mm 宽） |
| 供应商设备封装： | 14-SO |
| 包装： | 带卷 (TR) |
Electrical Characteristics
T A = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Type Min Typ
Max Units
Switching Characteristics
(Note 2)
t d(on)
Turn-On Delay Time
Q2
12
21
ns
Q1
9
18
t r
Turn-On Rise Time
Q2
13
23
ns
t d(off)
Turn-Off Delay Time
V DD = 15 V,
V GS = 10V,
I D = 1 A,
R GEN = 6 ?
Q1
Q2
5
30
10
49
ns
Q1
27
43
t f
Turn-Off Fall Time
Q2
19
35
ns
Q1
4
8
t d(on)
Turn-On Delay Time
Q2
17
30
ns
Q1
11
20
t r
Turn-On Rise Time
Q2
18
32
ns
t d(off)
Turn-Off Delay Time
V DD = 15 V,
V GS = 4.5V,
I D = 1 A,
R GEN = 6 ?
Q1
Q2
15
28
26
44
ns
Q1
16
29
t f
Turn-Off Fall Time
Q2
13
23
ns
Q1
9
18
Q g(TOT)
Total Gate Charge, V GS = 10V
Q2
Q2
28
39
nC
V DS = 15 V, I D = 14A
Q1
17
24
Q g(TOT)
Total Gate Charge, V GS = 5V
Q1
Q2
Q1
15
9
21
19
nC
Q gs
Gate-Source Charge
V DS = 15 V, I D = 11A
Q2
4.1
nC
Q1
2.7
Q gd
Gate-Drain Charge
Q2
4.9
nC
Drain-Source Diode Characteristics and Maximum Ratings
Q1
3.3
I S
Maximum Continuous Drain-Source Diode Forward Current
Q2
3.4
A
Q1
2.1
V SD
Drain-Source Diode Forward
V GS = 0 V, I S = 3.4 A
(Note 2)
Q2
0.5
0.7
V
Voltage
V GS = 0 V, I S = 1.9 A
(Note 2)
0.4
V GS = 0 V, I S = 2.1 A
(Note 2)
Q1
0.7
1.2
t rr
Q rr
t rr
Q rr
Diode Reverse Recovery Time
Diode Reverse Recovery Charge
Diode Reverse Recovery Time
Diode Reverse Recovery Charge
I F = 14A
dI F /dt = 300 A/μs
I F = 11A
dI F /dt = 100 A/μs
Q2
Q1
22
15
16
5
ns
nC
ns
nC
NOTE :
1.
R θ JA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting
surface of the drain pins. R θ JC is guaranteed by design while R θ CA is determined by the user's board design.
a)
b)
68°C/W when
mounted on a 1in 2 pad
of 2 oz copper (Q1).
52°C/W when
mounted on a 1in 2 pad
of 2 oz copper (Q2).
c)
d)
118°C/W when mounted
on a minimum pad of 2 oz
copper (Q1).
94°C/W when mounted on
a minimum pad of 2 oz
copper (Q2).
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300 μ s, Duty Cycle < 2.0%
3
4
FDQ7236AS Rev C
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相关代理商/技术参数 |
参数描述 |
|---|---|
| FDQ7238AS | 功能描述:MOSFET 30V Dual Notebook PwrSplyNChnlPwrTrnch RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDQ7238AS_08 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:Dual Notebook Power Supply N-Channel PowerTrench in SO-14 Package |
| FDQ7238AS_NF40 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:Dual Notebook Power Supply N-Channel PowerTrench in SO-14 Package |
| FDQ7238AS_NL | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:Dual Notebook Power Supply N-Channel PowerTrench in SO-14 Package |
| FDQ7238S | 功能描述:MOSFET N-Channel PowerTrench RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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