参数资料
型号: FDQ7236AS
厂商: Fairchild Semiconductor
文件页数: 4/9页
文件大小: 0K
描述: MOSFET N-CH 30V DUAL PS 14-SOIC
标准包装: 2,500
系列: PowerTrench®
FET 型: 2 个 N 沟道(双)
FET 特点: 逻辑电平门
漏极至源极电压(Vdss): 30V
电流 - 连续漏极(Id) @ 25° C: 14A,11A
开态Rds(最大)@ Id, Vgs @ 25° C: 8.7 毫欧 @ 14A,10V
Id 时的 Vgs(th)(最大): 3V @ 250µA
闸电荷(Qg) @ Vgs: 24nC @ 15V
输入电容 (Ciss) @ Vds: 920pF @ 15V
功率 - 最大: 1.3W,1.1W
安装类型: 表面贴装
封装/外壳: 14-SOIC(0.154",3.90mm 宽)
供应商设备封装: 14-SO
包装: 带卷 (TR)
Typical Characteristics: Q2
50
2.6
V GS = 10V
3.5V
V GS = 3.0V
40
6.0V
4.0V
2.2
4.5V
30
3.0V
1.8
3.5V
20
1.4
4.0V
4.5V
6.0V
10
0
2.5V
1
0.6
10.0V
0
0.5
1
1.5
2
0
10
20 30
40
50
1.6
1.4
1.2
1
0.8
0.6
V DS , DRAIN-SOURCE VOLTAGE (V)
Figure 1. On-Region Characteristics.
I D = 14A
V GS =10V
I D , DRAIN CURRENT (A)
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
0.024
I D = 7A
0.02
0.016
T A = 125 o C
0.012
T A = 25 o C
0.008
0.004
T J , JUNCTION TEMPERATURE ( C)
-50
-25
0 25 50 75 100
o
125
150
2
4 6 8
V GS , GATE TO SOURCE VOLTAGE (V)
10
50
40
Figure 3. On-Resistance Variation with
Temperature.
V DS = 5V
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
100
V GS = 0V
10
T A = 125 o C
1
30
0.1
25 o C
-55 C
-55 C
20
T A = 125 o C
o
0.01
o
25 C
10
0
o
0.001
0.0001
1
1.5
2 2.5 3 3.5
4
0
0.2 0.4 0.6 0.8
1
V GS , GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics.
V SD , BODY DIODE FORWARD VOLTAGE (V)
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDQ7236AS Rev C
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