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参数资料
| 型号： | FDQ7698S |
| 厂商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分类： | 小信号晶体管 |
| 英文描述： | Dual Notebook Power Supply N-Channel PowerTrench |
| 中文描述： | 12 mA, 30 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封装： | SO-14/11 |
| 文件页数： | 5/10页 |
| 文件大小： | 299K |
| 代理商： | FDQ7698S |
FDS7698S Rev C1 (W)
Typical Characteristics : Q2
0
2
4
6
8
10
0
10
20
30
Q
g
, GATE CHARGE (nC)
40
50
60
70
80
90
V
G
,
I
D
= 15A
V
DS
= 10V
20V
15V
0
800
1600
2400
3200
4000
4800
5600
6400
0
5
10
15
20
25
30
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
C
C
ISS
C
RSS
C
OSS
f = 1MHz
V
GS
= 0 V
Figure 7. Gate Charge Characteristics.
Figure 8. Capacitance Characteristics.
0.01
0.1
1
10
100
0.01
0.1
V
DS
, DRAIN-SOURCE VOLTAGE (V)
1
10
100
I
D
,
DC
1s
100ms
R
DS(ON)
LIMIT
V
GS
= 10V
SINGLE PULSE
R
θ
JA
= 94
o
C/W
T
A
= 25
o
C
10ms
100us
1ms
10s
0
10
20
30
40
50
0.01
0.1
1
10
100
1000
t
1
, TIME (sec)
P
SINGLE PULSE
R
θ
JA
= 94°C/W
T
A
= 25°C
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum
Power Dissipation.
0.001
0.01
0.1
1
0.0001
0.001
0.01
0.1
1
10
100
1000
t
1
, TIME (sec)
r
T
R
θ
JC
(t) = r(t) * R
θ
JC
R
θ
JC
= 94 °C/W
T
J
- T
C
= P * R
θ
JC
(t)
Duty Cycle, D = t
1
/ t
2
P(pk
t
1
t
2
SINGLE PULSE
0.01
0.02
0.05
0.1
0.2
D = 0.5
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1d.
Transient thermal response will change depending on the circuit board design.
F
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