参数资料
型号: FDQ7698S
厂商: FAIRCHILD SEMICONDUCTOR CORP
元件分类: 小信号晶体管
英文描述: Dual Notebook Power Supply N-Channel PowerTrench
中文描述: 12 mA, 30 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
封装: SO-14/11
文件页数: 6/10页
文件大小: 299K
代理商: FDQ7698S
FDS7698S Rev C1 (W)
Typical Characteristics : Q2
SyncFET Schottky Body Diode
Characteristics
Fairchild’s SyncFET process embeds a Schottky diode
in parallel with PowerTrench MOSFET. This diode
exhibits similar characteristics to a discrete external
Schottky diode in parallel with a MOSFET. Figure 12
shows the reverse recovery characteristic of the
FDQ7698S Q2.
TIME : 12.5ns/div
C
Figure 12. FDQ7698S SyncFET body diode
reverse recovery characteristic.
For comparison purposes, Figure 13 shows the reverse
recovery characteristics of the body diode of an
equivalent size MOSFET produced without
SyncFET(FDS6676).
C
TIME : 12.5ns/div
Figure 13. Non-SyncFET (FDS6676) body
Diode reverse recovery characteristic.
Schottky barrier diodes exhibit significant
leakage at high temperature and high reverse
voltage. This will increase the power in the
device.
0.00001
0.0001
0.001
0.01
0.1
0
5
10
15
20
25
30
V
DS
, REVERSE VOLTAGE (V)
I
D
,
T
A
= 25
o
C
T
A
= 100
o
C
T
A
= 125
o
C
Figure 14. SyncFET body diode reverse
leakage versus drain-source voltage and
temperature.
Additional SyncFET Characteristics
20
22
24
26
28
30
32
34
0
1
2
3
4
5
6
-V
GS
, GATE TO SOURCE VOLTAGE (V)
V
D
,
I
D
= 10mA
Figure 15. SyncFET Drain to Source
Voltage Variation With Negative Gate to
Source Bias.
F
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