参数资料
型号: FDS3572
厂商: Fairchild Semiconductor
文件页数: 11/11页
文件大小: 0K
描述: MOSFET N-CH 80V 8.9A 8SOIC
产品培训模块: High Voltage Switches for Power Processing
产品变化通告: Mold Compound Change 12/Dec/2007
标准包装: 1
系列: PowerTrench®
FET 型: MOSFET N 通道,金属氧化物
FET 特点: 逻辑电平门
漏极至源极电压(Vdss): 80V
电流 - 连续漏极(Id) @ 25° C: 8.9A
开态Rds(最大)@ Id, Vgs @ 25° C: 16 毫欧 @ 8.9A,10V
Id 时的 Vgs(th)(最大): 4V @ 250µA
闸电荷(Qg) @ Vgs: 41nC @ 10V
输入电容 (Ciss) @ Vds: 1990pF @ 25V
功率 - 最大: 2.5W
安装类型: 表面贴装
封装/外壳: 8-SOIC(0.154",3.90mm 宽)
供应商设备封装: 8-SOICN
包装: 标准包装
其它名称: FDS3572DKR
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
ACEx?
ActiveArray?
Bottomless?
CoolFET?
FACT Quiet Series?
FAST ?
FASTr?
FPS?
ISOPLANAR?
LittleFET?
MICROCOUPLER?
MicroFET?
POP?
Power247?
PowerTrench ?
QFET ?
SuperFET?
SuperSOT?-3
SuperSOT?-6
SuperSOT?-8
CROSSVOLT ? FRFET?
DOME? GlobalOptoisolator?
MicroPak?
MICROWIRE?
QS?
QT Optoelectronics?
SyncFET?
TinyLogic ?
EcoSPARK?
E 2 CMOS TM
GTO?
HiSeC?
MSX?
MSXPro?
Quiet Series?
RapidConfigure?
TINYOPTO?
TruTranslation?
EnSigna TM I 2 C?
FACT? ImpliedDisconnect?
Across the board. Around the world.?
The Power Franchise?
Programmable Active Droop?
OCX?
OCXPro?
OPTOLOGIC ?
OPTOPLANAR?
PACMAN?
RapidConnect?
SILENT SWITCHER ?
SMART START?
SPM?
Stealth?
UHC?
UltraFET ?
VCX?
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY
ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT
CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or
systems which, (a) are intended for surgical implant into
the body, or (b) support or sustain life, or (c) whose
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
user.
PRODUCT STATUS DEFINITIONS
Definition of Terms
2. A critical component is any component of a life
support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
support device or system, or to affect its safety or
effectiveness.
Datasheet Identification
Advance Information
Preliminary
No Identification Needed
Obsolete
Product Status
Formative or
In Design
First Production
Full Production
Not In Production
Definition
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. I7
相关PDF资料
PDF描述
FDS3580 MOSFET N-CH 80V 7.6A 8SOIC
FDS3590 MOSFET N-CH 80V 6.5A 8SOIC
FDS3672 MOSFET N-CH 100V 7.5A 8-SOIC
FDS3692 MOSFET N-CH 100V 4.5A SO-8
FDS3890 MOSFET N-CH DUAL 80V 4.7A SO-8
相关代理商/技术参数
参数描述
FDS3572 制造商:Fairchild Semiconductor Corporation 功能描述:N CHANNEL MOSFET 80V 8.9A SOIC
FDS3572_NL 制造商:Rochester Electronics LLC 功能描述: 制造商:Fairchild Semiconductor Corporation 功能描述:
FDS3572_Q 功能描述:MOSFET 80V N-Channel PowerTrench RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
FDS3580 功能描述:MOSFET SO-8 N-CH 80V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
FDS3580_00 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:80V N-Channel PowerTrench MOSFET