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| 型号： | FDS3572 |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 7/11页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 80V 8.9A 8SOIC |
| 产品培训模块： | High Voltage Switches for Power Processing |
| 产品变化通告： | Mold Compound Change 12/Dec/2007 |
| 标准包装： | 1 |
| 系列： | PowerTrench® |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 80V |
| 电流 - 连续漏极(Id) @ 25° C： | 8.9A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 16 毫欧 @ 8.9A，10V |
| Id 时的 Vgs(th)（最大）： | 4V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 41nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 1990pF @ 25V |
| 功率 - 最大： | 2.5W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-SOIC（0.154"，3.90mm 宽） |
| 供应商设备封装： | 8-SOICN |
| 包装： | 标准包装 |
| 其它名称： | FDS3572DKR |
Thermal Resistance vs. Mounting Pad Area
( T – T )
(EQ. 1)
P
DM = -------------------------------
(EQ. 2)
θ JA = 64 + -------------------------------
26
The maximum rated junction temperature, T JM , and the
thermal resistance of the heat dissipating path determines
the maximum allowable device power dissipation, P DM , in an
application. Therefore the application’s ambient
temperature, T A ( o C), and thermal resistance R θ JA ( o C/W)
must be reviewed to ensure that T JM is never exceeded.
Equation 1 mathematically represents the relationship and
serves as the basis for establishing the rating of the part.
JM A
R θ JA
In using surface mount devices such as the SO8 package,
the environment in which it is applied will have a significant
influence on the part’s current and maximum power
dissipation ratings. Precise determination of P DM is complex
and influenced by many factors:
1. Mounting pad area onto which the device is attached and
whether there is copper on one side or both sides of the
board.
2. The number of copper layers and the thickness of the
board.
3. The use of external heat sinks.
4. The use of thermal vias.
5. Air flow and board orientation.
6. For non steady state applications, the pulse width, the
duty cycle and the transient thermal response of the part,
the board and the environment they are in.
Fairchild provides thermal information to assist the
designer’s preliminary application evaluation. Figure 21
defines the R θ JA for the device as a function of the top
copper (component side) area. This is for a horizontally
positioned FR-4 board with 1oz copper after 1000 seconds
of steady state power with no air flow. This graph provides
the necessary information for calculation of the steady state
junction temperature or power dissipation. Pulse
applications can be evaluated using the Fairchild device
Spice thermal model or manually utilizing the normalized
150
COPPER BOARD AREA - DESCENDING ORDE R
0.04 in 2
maximum transient thermal impedance curve.
Thermal resistances corresponding to other copper areas
can be obtained from Figure 21 or by calculation using
Equation 2. The area, in square inches is the top copper
area including the gate and source pads.
R
0.23 + Area
The transient thermal impedance (Z θ JA ) is also effected by
varied top copper board area. Figure 22 shows the effect of
copper pad area on single pulse transient thermal
impedance. Each trace represents a copper pad area in
square inches corresponding to the descending list in the
graph. Spice and SABER thermal models are provided for
each of the listed pad areas.
Copper pad area has no perceivable effect on transient
thermal impedance for pulse widths less than 100ms. For
pulse widths less than 100ms the transient thermal
impedance is determined by the die and package.
Therefore, CTHERM1 through CTHERM5 and RTHERM1
through RTHERM5 remain constant for each of the thermal
models. A listing of the model component values is available
in Table 1.
200
R θ JA = 64 + 26/(0.23+Area )
150
100
50
0.001 0.01 0.1 1 10
AREA, TOP COPPER AREA (in 2 )
Figure 21. Thermal Resistance vs Mounting
Pad Area
120
90
60
30
0
0.28 in 2
0.52 in 2
0.76 in 2
1.00 in 2
10 -1
10 0
10 1
10 2
10 3
t, RECTANGULAR PULSE DURATION (s)
Figure 22. Thermal Impedance vs Mounting Pad Area
?2003 Fairchild Semiconductor Corporation
FDS3572 Rev. A
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相关代理商/技术参数 |
参数描述 |
|---|---|
| FDS3572 | 制造商:Fairchild Semiconductor Corporation 功能描述:N CHANNEL MOSFET 80V 8.9A SOIC |
| FDS3572_NL | 制造商:Rochester Electronics LLC 功能描述: 制造商:Fairchild Semiconductor Corporation 功能描述: |
| FDS3572_Q | 功能描述:MOSFET 80V N-Channel PowerTrench RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDS3580 | 功能描述:MOSFET SO-8 N-CH 80V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDS3580_00 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:80V N-Channel PowerTrench MOSFET |
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