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| 型号： | FDS3580 |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 2/5页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 80V 7.6A 8SOIC |
| 产品培训模块： | High Voltage Switches for Power Processing |
| 产品变化通告： | Mold Compound Change 12/Dec/2007 |
| 标准包装： | 1 |
| 系列： | PowerTrench® |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 80V |
| 电流 - 连续漏极(Id) @ 25° C： | 7.6A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 29 毫欧 @ 7.6A，10V |
| Id 时的 Vgs(th)（最大）： | 4V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 46nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 1800pF @ 25V |
| 功率 - 最大： | 1W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-SOIC（0.154"，3.90mm 宽） |
| 供应商设备封装： | 8-SOICN |
| 包装： | 标准包装 |
| 其它名称： | FDS3580FSDKR |
Electrical Characteristics
T A = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max Units
Drain-Source Avalanche Ratings (Note 2)
W DSS
Single Pulse Drain-Source
V DD = 40 V, I D = 7.6 A
245
mJ
Avalanche Energy
I AR
Maximum Drain-Source Avalanche Current
7.6
A
Off Characteristics
BV DSS Drain-Source Breakdown Voltage
V GS = 0 V, I D = 250 μ A
80
V
? BV DSS
? T J
I DSS
I GSSF
I GSSR
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate-Body Leakage, Forward
Gate-Body Leakage, Reverse
I D = 250 μ A, Referenced to 25 ° C
V DS = 64 V, V GS = 0 V
V GS = 20 V, V DS = 0 V
V GS = -20 V, V DS = 0 V
81
1
100
-100
mV/ ° C
μ A
nA
nA
On Characteristics (Note 2)
V GS(th) Gate Threshold Voltage
V DS = V GS , I D = 250 μ A
2
2.5
4
V
? V GS(th)
? T J
R DS(on)
Gate Threshold Voltage
Temperature Coefficient
Static Drain-Source
On-Resistance
I D = 250 μ A, Referenced to 25 ° C
V GS = 10 V, I D = 7.6 A
V GS = 10 V, I D = 7.6 A, T J =125 ° C
-7
0.022
0.037
0.029
0.055
mV/ ° C
?
V GS = 6 V, I D = 7 A
0.024
0.033
I D(on)
g FS
On-State Drain Current
Forward Transconductance
V GS = 10 V, V DS = 5 V
V DS = 5 V, I D = 7.6 A
30
28
A
S
Dynamic Characteristics
C iss
C oss
C rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V DS = 25 V, V GS = 0 V,
f = 1.0 MHz
1800
180
90
pF
pF
pF
Switching Characteristics
(Note 2)
t d(on)
t r
t d(off)
t f
Q g
Q gs
Q gd
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V DD = 40 V, I D = 1 A,
V GS = 10 V, R GEN = 6 ?
V DS = 40 V, I D = 7.6 A,
V GS = 10 V
13
8
34
16
34
6.1
6.9
26
20
60
30
46
ns
ns
ns
ns
nC
nC
nC
Drain-Source Diode Characteristics and Maximum Ratings
I S
Maximum Continuous Drain-Source Diode Forward Current
2.1
A
V SD
Drain-Source Diode Forward Voltage V GS = 0 V, I S = 2.1 A
(Note 2)
0.74
1.2
V
Notes:
1: R θ JA is the sum of the junction-to-case and case-to-ambient resistance where the case thermal reference is defined as the solder mounting surface of the
drain pins. R θ JC is guaranteed by design while R θ CA is determined by the user's board design.
a) 50 ° C/W when
mounted on a 1 in 2
pad of 2 oz. copper.
b) 105 ° C/W when
mounted on a 0.04 in 2
pad of 2 oz. copper.
c) 125 ° C/W when
mounted on a minimum
pad.
Scale 1 : 1 on letter size paper
2: Pulse Test: Pulse Width ≤ 300 μ s, Duty Cycle ≤ 2.0%
FDS3580 Rev. C
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相关代理商/技术参数 |
参数描述 |
|---|---|
| FDS3580_00 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:80V N-Channel PowerTrench MOSFET |
| FDS3590 | 功能描述:MOSFET SO-8 N-CH 80V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDS3601 | 功能描述:MOSFET SO-8 RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDS3601N | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | MATCHED PAIR | N-CHANNEL | 100V V(BR)DSS | 1.3A I(D) | SO |
| FDS3612 | 功能描述:MOSFET SO-8 RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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