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参数资料
| 型号： | FDS4435BZ_F085 |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 1/6页 |
| 文件大小： | 0K |
| 描述： | MOSFET P-CH 30V 8-SOIC |
| 标准包装： | 2,500 |
| 系列： | PowerTrench® |
| FET 型： | MOSFET P 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 30V |
| 电流 - 连续漏极(Id) @ 25° C： | 8.8A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 20 毫欧 @ 8.8A，10V |
| Id 时的 Vgs(th)（最大）： | 3V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 40nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 1845pF @ 15V |
| 功率 - 最大： | 1W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-SOIC（0.154"，3.90mm 宽） |
| 供应商设备封装： | 8-SOICN |
| 包装： | 带卷 (TR) |
July 2009
FDS4435BZ _F085
P-Channel PowerTrench ? MOSFET
-30V, -8.8A, 20m :
Features
General Description
? Max r DS(on) = 20m : at V GS = -10V, I D = -8.8A
This
P-Channel
MOSFET
is
produced
using
Fairchild
? Max r DS(on) = 35m : at V GS = -4.5V, I D = -6.7A
? Extended V GSS range (-25V) for battery applications
? HBM ESD protection level of ±3.8KV typical (note 3)
? High performance trench technology for extremely low r DS(on)
? High power and current handling capability
? Termination is Lead-free and RoHS compliant
? Qualified to AEC Q101
D
D
Semiconductor’s advanced PowerTrench ? process that has
been especially tailored to minimize the on-state resistance.
This device is well suited for Power Management and load
switching applications common in Notebook Computers and
Portable Battery Packs.
D
D
5
4
G
D
D
6
3
S
G
D
7
2
S
Pin 1
S
S
S
D
8
1
S
SO-8
MOSFET Maximum Ratings T A = 25°C unless otherwise noted
Symbol
V DS
V GS
Drain to Source Voltage
Gate to Source Voltage
Parameter
Ratings
-30
±25
Units
V
V
I D
P D
E AS
Drain Current -Continuous
-Pulsed
Power Dissipation
Power Dissipation
Single Pulse Avalanche Energy
T A = 25°C
T A = 25°C
T A = 25°C
(Note 1a)
(Note 1a)
(Note 1b)
(Note 4)
-8.8
-50
2.5
1.0
24
A
W
mJ
T J , T STG
Operating and Storage Junction Temperature Range
-55 to +150
°C
Thermal Characteristics
R T JC
R T JA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
(Note 1a)
25
50
°C/W
Package Marking and Ordering Information
Device Marking
FDS4435BZ
Device
FDS4435BZ _F085
Package
SO-8
Reel Size
13’’
Tape Width
12mm
Quantity
2500units
?2009 Fairchild Semiconductor Corporation
FDS4435BZ _F085 Rev. A
1
www.fairchildsemi.com
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| FDS4465_G | 制造商:Fairchild Semiconductor Corporation 功能描述:P-CHANNEL 1.8V SPECIFIED POWERTRENCH?? M 制造商:Fairchild 功能描述:P-Channel 1.8V Specified PowerTrenchR MOSFET |
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