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| 型号： | FDS4488 |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 1/5页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 30V 7.9A 8SOIC |
| 产品培训模块： | High Voltage Switches for Power Processing |
| 产品变化通告： | Mold Compound Change 12/Dec/2007 |
| 标准包装： | 2,500 |
| 系列： | PowerTrench® |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 30V |
| 电流 - 连续漏极(Id) @ 25° C： | 7.9A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 22 毫欧 @ 7.9A，10V |
| Id 时的 Vgs(th)（最大）： | 3V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 13nC @ 5V |
| 输入电容 (Ciss) @ Vds： | 927pF @ 15V |
| 功率 - 最大： | 1W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-SOIC（0.154"，3.90mm 宽） |
| 供应商设备封装： | 8-SOICN |
| 包装： | 带卷 (TR) |
April 2013
FDS4488
30V N-Channel PowerTrench ? MOSFET
General Description
Features
This N-Channel MOSFET is produced using Fairchild
Semiconductor’s advanced PowerTrench process that
has been especially tailored to minimize on-state
? 7.9 A, 30 V.
R DS(ON) = 22 m ? @ V GS = 10 V
R DS(ON) = 30 m ? @ V GS = 4.5 V
resistance and yet maintain superior switching
performance. These devices are well suited for low
voltage and battery powered applications where low in-
line power loss and fast switching are required.
Applications
? DC/DC converter
? Load switch
? Motor drives
? Low gate charge (9.5 nC typical)
? High performance trench technology for extremely
low R DS(ON)
? High power and current handling capability
D D
D D
D D
D D
5
6
4
3
7
2
S S S
SO-8
Pin 1 SO-8
S
G
S S G
8
1
Absolute Maximum Ratings
T A =25 o C unless otherwise noted
Symbol
V DSS
V GSS
Parameter
Drain-Source Voltage
Gate-Source Voltage
Ratings
30
± 25
Units
V
V
I D
Drain Current
– Continuous
(Note 1a)
7.9
A
– Pulsed
40
P D
Power Dissipation for Single Operation
(Note 1a)
2.5
W
(Note 1b)
(Note 1c)
1.2
1.0
T J , T STG
Operating and Storage Junction Temperature Range
–55 to +175
° C
Thermal Characteristics
R θ JA
R θ J C
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
50
25
° C/W
Package Marking and Ordering Information
Device Marking
FDS4488
Device
FDS4488
Reel Size
13’’
Tape width
12mm
Quantity
2500 units
? 2001 Fairchild Semiconductor Corporation
FDS4488 Rev C (W)
相关PDF资料 |
PDF描述 |
|---|---|
| FDS4501H | MOSFET N/P-CH 30/20V 8SOIC |
| FDS4559 | MOSFET N/P-CH 60V 4.5/3.5A SO-8 |
| FDS4672A | MOSFET N-CH 40V 11A 8SOIC |
| FDS4675_F085 | MOSFET P-CH 40V 8-SOIC |
| FDS4675 | MOSFET P-CH 40V 11A 8SOIC |
相关代理商/技术参数 |
参数描述 |
|---|---|
| FDS4501H | 功能描述:MOSFET SO-8 COMP N-P-CH RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDS4559 | 功能描述:MOSFET 60V/-60V N/P RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDS4559 | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET |
| FDS4559_08 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:60V Complementary PowerTrench???MOSFET |
| FDS4559_F085 | 功能描述:MOSFET 60V Complementary PowerTrench MOS RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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