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| 型号： | FDS4672A |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 1/6页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 40V 11A 8SOIC |
| 产品培训模块： | High Voltage Switches for Power Processing |
| 产品变化通告： | Mold Compound Change 12/Dec/2007 |
| 标准包装： | 1 |
| 系列： | PowerTrench® |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 40V |
| 电流 - 连续漏极(Id) @ 25° C： | 11A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 13 毫欧 @ 11A，4.5V |
| Id 时的 Vgs(th)（最大）： | 2V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 49nC @ 4.5V |
| 输入电容 (Ciss) @ Vds： | 4766pF @ 20V |
| 功率 - 最大： | 1.2W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-SOIC（0.154"，3.90mm 宽） |
| 供应商设备封装： | 8-SOICN |
| 包装： | 标准包装 |
| 产品目录页面： | 1603 (CN2011-ZH PDF) |
| 其它名称： | FDS4672ADKR |
February 2007
FDS4672A
40V N-Channel PowerTrench ? MOSFET
General Description
Features
tm
This N-Channel MOSFET has been designed
specifically to improve the overall efficiency of DC/DC
? 11 A, 40 V.
R DS(ON) = 13 m Ω @ V GS = 4.5 V
converters using either synchronous or conventional
switching PWM controllers. It has been optimized for
low gate charge, low R DS(ON) and fast switching speed.
Applications
? DC/DC converter
? High performance trench technology for extremely
low R DS(ON)
? Low gate charge (35 nC typical)
? High power and current handling capability
? RoHS Compliant
D
D
D
D
5
6
4
3
SO-8
S
S
S
G
7
8
2
1
T A =25 C unless otherwise noted
Absolute Maximum Ratings
o
Symbol
V DSS
V GSS
Parameter
Drain-Source Voltage
Gate-Source Voltage
Ratings
40
± 12
Units
V
V
I D
Drain Current
– Continuous
(Note 1a)
11
A
– Pulsed
50
E AS
P D
Single Pulse Avalanche Energy
Power Dissipation for Single Operation
( Note 3 )
(Note 1a)
1 81
2.5
mJ
W
(Note 1b)
(Note 1c)
1.4
1.2
T J , T STG
Operating and Storage Junction Temperature Range
-55 to +175
° C
Thermal Characteristics
R θ JA
R θ JC
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
50
25
° C/W
° C/W
Package Marking and Ordering Information
Device Marking
FDS4672A
Device
FDS4672A
Reel Size
13’’
Tape width
12mm
Quantity
2500 units
? 2007 Fairchild Semiconductor Corporation
FDS4672A Rev C 1 (W)
相关PDF资料 |
PDF描述 |
|---|---|
| FDS4675_F085 | MOSFET P-CH 40V 8-SOIC |
| FDS4675 | MOSFET P-CH 40V 11A 8SOIC |
| FDS4897AC | MOSFET N/P-CH 40V 6.1/5.2A SO8 |
| FDS4897C | MOSFET N/P-CH 40V 8-SOIC |
| FDS4935A | MOSFET P-CHAN 30V 7A 8SOIC |
相关代理商/技术参数 |
参数描述 |
|---|---|
| FDS4672A_07 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:40V N-Channel PowerTrench㈢ MOSFET |
| FDS4675 | 功能描述:MOSFET SO-8 RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDS4675 | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET P SMD SO-8 |
| FDS4675 | 制造商:Fairchild Semiconductor Corporation 功能描述:S0-8 SINGLE PCH 40V/20V:ROHS COMPLIAN |
| FDS4675_10 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:40V P-Channel Power TrenchMOSFET |
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