参数资料
型号: FDS4675
厂商: Fairchild Semiconductor
文件页数: 1/5页
文件大小: 0K
描述: MOSFET P-CH 40V 11A 8SOIC
产品培训模块: High Voltage Switches for Power Processing
产品变化通告: Mold Compound Change 12/Dec/2007
标准包装: 1
系列: PowerTrench®
FET 型: MOSFET P 通道,金属氧化物
FET 特点: 逻辑电平门
漏极至源极电压(Vdss): 40V
电流 - 连续漏极(Id) @ 25° C: 11A
开态Rds(最大)@ Id, Vgs @ 25° C: 13 毫欧 @ 11A,10V
Id 时的 Vgs(th)(最大): 3V @ 250µA
闸电荷(Qg) @ Vgs: 56nC @ 4.5V
输入电容 (Ciss) @ Vds: 4350pF @ 20V
功率 - 最大: 1.2W
安装类型: 表面贴装
封装/外壳: 8-SOIC(0.154",3.90mm 宽)
供应商设备封装: 8-SOICN
包装: 标准包装
产品目录页面: 1603 (CN2011-ZH PDF)
其它名称: FDS4675DKR
February 2001
FDS4675
40V P-Channel PowerTrench ? MOSFET
General Description
Features
This P-Channel MOSFET is a rugged gate version of
Fairchild Semiconductor’s advanced PowerTrench
process. It has been optimized for power management
? –11 A, –40 V
R DS(ON) = 0.013 ? @ V GS = –10 V
R DS(ON) = 0.017 ? @ V GS = –4.5 V
applications requiring a wide range of gave drive
voltage ratings (4.5V – 20V).
Applications
? Power management
? Load switch
? Battery protection
? Fast switching speed
? High performance trench technology for extremely
low R DS(ON)
? High power and current handling capability
D D
D D
D D
D D
5
6
4
3
7
2
S S S
S S G
SO-8
Pin 1 SO-8
S
G
8
1
Absolute Maximum Ratings
T A =25 o C unless otherwise noted
Symbol
V DSS
V GSS
Parameter
Drain-Source Voltage
Gate-Source Voltage
Ratings
– 40
± 20
Units
V
V
I D
Drain Current
– Continuous
(Note 1a)
– 11
A
– Pulsed
– 50
P D
Power Dissipation for Single Operation
(Note 1a)
2.4 (steady state)
W
(Note 1b)
(Note 1c)
1.4
1.2
T J , T STG
Operating and Storage Junction Temperature Range
-55 to +175
° C
Thermal Characteristics
R θ JA
R θ JA
R θ J C
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1c)
(Note 1)
62.5 (steady state), 50 (10 sec)
125
25
° C/W
° C/W
° C/W
Package Marking and Ordering Information
Device Marking
FDS4675
Device
FDS4675
Reel Size
13’’
Tape width
12mm
Quantity
2500 units
? 2001 Fairchild Semiconductor Corporation
FDS4675 Rev C(W)
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相关代理商/技术参数
参数描述
FDS4675 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET P SMD SO-8
FDS4675 制造商:Fairchild Semiconductor Corporation 功能描述:S0-8 SINGLE PCH 40V/20V:ROHS COMPLIAN
FDS4675_10 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:40V P-Channel Power TrenchMOSFET
FDS4675_F085 功能描述:MOSFET P-CHANNEL MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
FDS4685 功能描述:MOSFET 40V PCH POWER TRENCH MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube