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| 型号： | FDS4672A |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 2/6页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 40V 11A 8SOIC |
| 产品培训模块： | High Voltage Switches for Power Processing |
| 产品变化通告： | Mold Compound Change 12/Dec/2007 |
| 标准包装： | 1 |
| 系列： | PowerTrench® |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 40V |
| 电流 - 连续漏极(Id) @ 25° C： | 11A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 13 毫欧 @ 11A，4.5V |
| Id 时的 Vgs(th)（最大）： | 2V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 49nC @ 4.5V |
| 输入电容 (Ciss) @ Vds： | 4766pF @ 20V |
| 功率 - 最大： | 1.2W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-SOIC（0.154"，3.90mm 宽） |
| 供应商设备封装： | 8-SOICN |
| 包装： | 标准包装 |
| 产品目录页面： | 1603 (CN2011-ZH PDF) |
| 其它名称： | FDS4672ADKR |
Electrical Characteristics
T A = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max Units
Off Characteristics
BV DSS
Δ BV DSS
Δ T J
I DSS
Drain–Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
V GS = 0 V, I D = 250 μ A
I D = 250 μ A, Referenced to 25 ° C
V DS = 32 V, V GS = 0 V
40
37
1
V
mV/ ° C
μ A
I GSSF
Gate–Body Leakage, Forward
V GS = 12 V,
V DS = 0 V
100
nA
I GSSR
Gate–Body Leakage, Reverse
V GS = –12 V V DS = 0 V
–100
nA
On Characteristics
(Note 2)
V GS(th)
Δ V GS(th)
Δ T J
R DS(on)
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
V DS = V GS , I D = 250 μ A
I D = 250 μ A, Referenced to 25 ° C
V GS = 4.5 V, I D = 11 A
0.8
1.2
–4
10
2.0
13
V
mV/ ° C
m Ω
On–Resistance
V GS =4.5 V, I D =11A, T J =125 ° C
15
21
I D(on)
g FS
On–State Drain Current
Forward Transconductance
V GS = 4.5 V, V DS = 5 V
V DS = 5 V, I D = 11 A
50
65
A
S
Dynamic Characteristics
C iss
C oss
C rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V DS = 20 V, V GS = 0 V,
f = 1.0 MHz
4766
346
155
pF
pF
pF
Switching Characteristics
(Note 2)
t d(on)
t r
t d(off)
t f
Q g
Q gs
Q gd
Turn–On Delay Time
Turn–On Rise Time
Turn–Off Delay Time
Turn–Off Fall Time
Total Gate Charge
Gate–Source Charge
Gate–Drain Charge
V DD = 20 V, I D = 1 A,
V GS = 4.5 V, R GEN = 6 Ω
V DS = 20 V, I D = 11 A,
V GS = 4.5 V
17
9
43
14
35
7.8
8.8
31
18
68
25
49
ns
ns
ns
ns
nC
nC
nC
Drain–Source Diode Characteristics and Maximum Ratings
I S
Maximum Continuous Drain–Source Diode Forward Current
2.1
A
V SD
Drain–Source Diode Forward
Voltage
V GS = 0 V, I S = 2.1 A
(Note 2)
0.7
1.2
V
Notes:
1. R θ JA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. R θ JC is guaranteed by design while R θ CA is determined by the user's board design.
a) 50° C /W when
mounted on a 1in 2
pad of 2 oz copper
b) 105° C /W when
mounted on a .04 in 2
pad of 2 oz copper
c) 125° C /W when mounted on a
minimum pad.
3 .Starting T J = 25 C, L = 3mH,I D = 11A, V DD = 40V, V GS = 10V
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300 μ s, Duty Cycle < 2.0%
o
FDS4672A Rev C 1 (W)
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PDF描述 |
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| FDS4675_F085 | MOSFET P-CH 40V 8-SOIC |
| FDS4675 | MOSFET P-CH 40V 11A 8SOIC |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| FDS4672A_07 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:40V N-Channel PowerTrench㈢ MOSFET |
| FDS4675 | 功能描述:MOSFET SO-8 RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDS4675 | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET P SMD SO-8 |
| FDS4675 | 制造商:Fairchild Semiconductor Corporation 功能描述:S0-8 SINGLE PCH 40V/20V:ROHS COMPLIAN |
| FDS4675_10 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:40V P-Channel Power TrenchMOSFET |
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