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参数资料
| 型号： | FDS4675_F085 |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 1/5页 |
| 文件大小： | 0K |
| 描述： | MOSFET P-CH 40V 8-SOIC |
| 标准包装： | 1 |
| 系列： | PowerTrench® |
| FET 型： | MOSFET P 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 40V |
| 电流 - 连续漏极(Id) @ 25° C： | 11A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 13 毫欧 @ 11A，10V |
| Id 时的 Vgs(th)（最大）： | 3V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 56nC @ 4.5V |
| 输入电容 (Ciss) @ Vds： | 4350pF @ 20V |
| 功率 - 最大： | 1.2W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-SOIC（0.154"，3.90mm 宽） |
| 供应商设备封装： | 8-SO |
| 包装： | 标准包装 |
| 其它名称： | FDS4675_F085DKR |
June 2013
FDS4675 _F085
40V P-Channel PowerTrench ? MOSFET
General Description
This P-Channel MOSFET is a rugged gate version of
Fairchild Semiconductor’s advanced PowerTrench
process. It has been optimized for power management
applications requiring a wide range of gave drive
voltage ratings (4.5V – 20V).
Applications
? Power management
? Load switch
? Battery protection
tm
Features
? –11 A, –40 V R DS(ON) = 0.013 ? @ V GS = –10 V
R DS(ON) = 0.017 ? @ V GS = –4.5 V
? Fast switching speed
? High performance trench technology for extremely
low R DS(ON)
? High power and current handling capability
? Qualified to AEC Q101
? RoHS Compliant
D
D
D
D
5
6
4
3
7
2
SO-8
Pin 1
S
S
S
G
8
1
Absolute Maximum Ratings
T A =25 o C unless otherwise noted
Symbol
V DSS
V GSS
Parameter
Drain-Source Voltage
Gate-Source Voltage
Ratings
– 40
± 20
Units
V
V
I D
Drain Current
– Continuous
(Note 1a)
– 11
A
– Pulsed
– 50
P D
Power Dissipation for Single Operation
(Note 1a)
2.4 (steady state)
W
(Note 1b)
(Note 1c)
1.4
1.2
T J , T STG
Operating and Storage Junction Temperature Range
-55 to +150
° C
Thermal Characteristics
R θ JA
R θ JA
R θ J C
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1c)
(Note 1)
62.5 (steady state), 50 (10 sec)
125
25
° C/W
° C/W
° C/W
Package Marking and Ordering Information
Device Marking
FDS4675
Device
FDS4675_F085
Reel Size
13’’
Tape width
12mm
Quantity
2500 units
?20 13 Fairchild Semiconductor Corporation
FDS 4675_F085 Rev. C1
1
www.fairchildsemi.com
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相关代理商/技术参数 |
参数描述 |
|---|---|
| FDS4685 | 功能描述:MOSFET 40V PCH POWER TRENCH MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDS4685 | 制造商:Fairchild Semiconductor Corporation 功能描述:P CHANNEL MOSFET -40V 8.2mA |
| FDS4685-CUT TAPE | 制造商:FAIRCHILD 功能描述:FDS4685 Series 40 V 27 mOhm P-Channel PowerTrench Mosfet SOIC-8 |
| FDS4770 | 功能描述:MOSFET 40V N-Ch PowerTrench RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDS4770 | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET TRANSISTOR ROHS COMPLIANT:NO |
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