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参数资料
| 型号： | FDS4675_F085 |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 2/5页 |
| 文件大小： | 0K |
| 描述： | MOSFET P-CH 40V 8-SOIC |
| 标准包装： | 1 |
| 系列： | PowerTrench® |
| FET 型： | MOSFET P 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 40V |
| 电流 - 连续漏极(Id) @ 25° C： | 11A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 13 毫欧 @ 11A，10V |
| Id 时的 Vgs(th)（最大）： | 3V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 56nC @ 4.5V |
| 输入电容 (Ciss) @ Vds： | 4350pF @ 20V |
| 功率 - 最大： | 1.2W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-SOIC（0.154"，3.90mm 宽） |
| 供应商设备封装： | 8-SO |
| 包装： | 标准包装 |
| 其它名称： | FDS4675_F085DKR |
Electrical Characteristics
T A = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max Units
Off Characteristics
BV DSS
? BV DSS
? T J
I DSS
Drain–Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
V GS = 0 V, I D = –250 μ A
I D = –250 μ A, Referenced to 25 ° C
V DS = –32 V, V GS = 0 V
–40
–34
–1
V
mV/ ° C
μ A
I GSSF
I GSSR
Gate–Body Leakage, Forward
Gate–Body Leakage, Reverse
V GS = 20 V,
V GS = –20 V
V DS = 0 V
V DS = 0 V
100
–100
nA
nA
On Characteristics
(Note 2)
V GS(th)
? V GS(th)
? T J
R DS(on)
g FS
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
Forward Transconductance
V DS = V GS , I D = –250 μ A
I D = –250 μ A, Referenced to 25 ° C
V GS = –10 V, I D = –11 A
V GS = –4.5 V, I D = –9.5 A
V GS =–10 V, I D =–11 A, T J =125 ° C
V DS = –5 V,
I D = –11 A
–1
–1.4
4.6
10
13
15
44
–3
13
17
21
V
mV/ ° C
m ?
S
Dynamic Characteristics
C iss
C oss
C rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V DS = –20 V,
f = 1.0 MHz
V GS = 0 V,
4350
622
290
pF
pF
pF
Switching Characteristics
(Note 2)
t d(on)
t r
t d(off)
t f
Q g
Q gs
Turn–On Delay Time
Turn–On Rise Time
Turn–Off Delay Time
Turn–Off Fall Time
Total Gate Charge
Gate–Source Charge
V DD = –20 V,
V GS = –4.5 V,
V DS = –20 V,
V GS = –4.5 V
I D = –1 A,
R GEN = 6 ?
I D = –11 A,
20
29
95
60
40
11
36
46
152
96
56
ns
ns
ns
ns
nC
nC
Q gd
Gate–Drain Charge
13
nC
Drain–Source Diode Characteristics and Maximum Ratings
I S
Maximum Continuous Drain–Source Diode Forward Current
–2.1
A
V SD
Drain–Source Diode Forward
Voltage
V GS = 0 V, I S = –2.1 A
(Note 2)
–0.7
–1.2
V
Notes:
1. R θ JA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. R θ JC is guaranteed by design while R θ CA is determined by the user's board design.
a) 50°C/W when
mounted on a 1in 2
pad of 2 oz copper
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300 μ s, Duty Cycle < 2.0%
FDS 4675_F085 Rev. C1
b) 105°C/W when
mounted on a .04 in 2
pad of 2 oz copper
2
c) 125°C/W when mounted on a
minimum pad.
www.fairchildsemi.com
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