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| 型号： | FDS5672 |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 2/12页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 60V 12A 8-SOIC |
| 产品培训模块： | High Voltage Switches for Power Processing |
| 产品变化通告： | Mold Compound Change 12/Dec/2007 |
| 产品目录绘图： | Power MOSFET, 8-SOP, SO-8 |
| 标准包装： | 1 |
| 系列： | PowerTrench® |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 60V |
| 电流 - 连续漏极(Id) @ 25° C： | 12A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 10 毫欧 @ 12A，10V |
| Id 时的 Vgs(th)（最大）： | 4V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 45nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 2200pF @ 25V |
| 功率 - 最大： | 2.5W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-SOIC（0.154"，3.90mm 宽） |
| 供应商设备封装： | 8-SOICN |
| 包装： | 标准包装 |
| 产品目录页面： | 1604 (CN2011-ZH PDF) |
| 其它名称： | FDS5672DKR |
MOSFET Maximum Ratings T C = 25°C unless otherwise noted
Symbol
V DSS
V GS
Drain to Source Voltage
Gate to Source Voltage
Parameter
Ratings
60
± 20
Units
V
V
Drain Current
Continuous (T C = 25 C, V GS = 6V, R θ JA = 50 C/W)
I D
E AS
P D
Continuous (T C = 25 o C, V GS = 10V, R θ JA = 50 o C/W)
o o
Pulsed
Single Pulse Avalanche Energy (Note 1)
Power dissipation
Derate above 25 o C
12
10
Figure 4
245
2.5
20
A
A
mJ
W
mW/ o C
T J , T STG
Operating and Storage Temperature
-55 to 150
o
C
Thermal Characteristics
R θ JC
R θ JA
Thermal Resistance Junction to Case (Note 2)
Thermal Resistance Junction to Ambient at 10 seconds (Note 3)
25
50
o C/W
o C/W
R θ JA
Thermal Resistance Junction to Ambient at 1000 seconds (Note 3)
85
o
C/W
Package Marking and Ordering Information
Device Marking
FDS5672
Device
FDS5672
Package
SO-8
Reel Size
330mm
Tape Width
12mm
Quantity
2500 units
Electrical Characteristics T C = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
B VDSS
Drain to Source Breakdown Voltage
I D = 250 μ A, V GS = 0V
60
-
-
V
I DSS
I GSS
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
V DS = 50V
V GS = 0V
V GS = ± 20V
T C = 150 o C
-
-
-
-
-
-
1
250
± 100
μ A
nA
On Characteristics
V GS(TH)
Gate to Source Threshold Voltage
V GS = V DS , I D = 250 μ A
2
-
4
V
I D = 12A, V GS = 10V
-
0.0088
0.010
r DS(ON)
Drain to Source On Resistance
I D = 10A, V GS = 6V,
I D = 12A, V GS = 10V,
T C = 150 o C
-
-
0.012
0.016
0.014
0.023
?
Dynamic Characteristics
C ISS
C OSS
C RSS
R G
Q g(TOT)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge at 10V
V DS = 25V, V GS = 0V,
f = 1MHz
V GS = 0.5V, f = 1MHz
V GS = 0V to 10V
-
-
-
-
-
2200
410
130
1.4
34
-
-
-
-
45
pF
pF
pF
?
nC
Q g(TH)
Q gs
Q gs2
Q gd
Threshold Gate Charge
Gate to Source Gate Charge
Gate Charge Threshold to Plateau
Gate to Drain “Miller” Charge
V GS = 0V to 2V
V DD = 30V
I D = 12A
I g = 1.0mA
-
-
-
-
4.2
9.4
5.2
9.3
5.5
-
-
-
nC
nC
nC
nC
?2005 Fairchild Semiconductor Corporation
FDS5672 Rev. A
2
www.fairchildsemi.com
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| FDS5680 | 功能描述:MOSFET SO-8 N-CH 60V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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| FDS5680_NL | 制造商:Fairchild Semiconductor Corporation 功能描述: |
| FDS5682 | 功能描述:MOSFET 60V N-CH. FET 20 MO SO8 TR RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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