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参数资料
| 型号： | FDS5672 |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 5/12页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 60V 12A 8-SOIC |
| 产品培训模块： | High Voltage Switches for Power Processing |
| 产品变化通告： | Mold Compound Change 12/Dec/2007 |
| 产品目录绘图： | Power MOSFET, 8-SOP, SO-8 |
| 标准包装： | 1 |
| 系列： | PowerTrench® |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 60V |
| 电流 - 连续漏极(Id) @ 25° C： | 12A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 10 毫欧 @ 12A，10V |
| Id 时的 Vgs(th)（最大）： | 4V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 45nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 2200pF @ 25V |
| 功率 - 最大： | 2.5W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-SOIC（0.154"，3.90mm 宽） |
| 供应商设备封装： | 8-SOICN |
| 包装： | 标准包装 |
| 产品目录页面： | 1604 (CN2011-ZH PDF) |
| 其它名称： | FDS5672DKR |
Typical Characteristics T C = 25°C unless otherwise noted
400
50
100
10
OPERATION IN THIS
100 μ s
1ms
10
If R = 0
t AV = (L)(I AS )/(1.3*RATED BV DSS - V DD )
If R ≠ 0
t AV = (L/R)ln[(I AS *R)/(1.3*RATED BV DSS - V DD ) +1]
STARTING T J = 25 o C
1
0.1
AREA MAY BE
LIMITED BY r DS(ON)
SINGLE PULSE
T J = MAX RATED
T A = 25 o C
10ms
1
STARTING T J = 150 o C
0.1
1
10
70
0.1
1
10
100
V DS , DRAIN TO SOURCE VOLTAGE (V)
Figure 5. Forward Bias Safe Operating Area
25
t AV , TIME IN AVALANCHE (ms)
NOTE: Refer to Fairchild Application Notes AN7514 and AN7515
Figure 6. Unclamped Inductive Switching
Capability
25
20
PULSE DURATION = 80 μ s
DUTY CYCLE = 0.5% MAX
V DD = 15V
20
V GS = 6V
V GS = 5V
15
15
10
T J = 150 o C
T J = 25 o C
T J = -55 o C
10
V GS = 10V
V GS = 4.5V
5
0
5
0
PULSE DURATION = 80 μ s
DUTY CYCLE = 0.5% MAX
T A = 25 o C
3.0
3.5
4.0
4.5
5.0
5.5
0
0.2
0.4
0.6
0.8
1.0
15.0
V GS , GATE TO SOURCE VOLTAGE (V)
Figure 7. Transfer Characteristics
V GS = 6V
V DS , DRAIN TO SOURCE VOLTAGE (V)
Figure 8. Saturation Characteristics
2.0
PULSE DURATION = 80 μ s
DUTY CYCLE = 0.5% MAX
12.5
1.5
10.0
7.5
5.0
V GS = 10V
PULSE DURATION = 80 μ s
DUTY CYCLE = 0.5% MAX
1.0
0.5
V GS = 10V, I D = 12A
0
3
6
9
12
-80
-40
0
40
80
120
160
I D , DRAIN CURRENT (A)
Figure 9. Drain to Source On Resistance vs Drain
Current
T J , JUNCTION TEMPERATURE ( o C)
Figure 10. Normalized Drain to Source On
Resistance vs Junction Temperature
?2005 Fairchild Semiconductor Corporation
FDS5672 Rev. A
5
www.fairchildsemi.com
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| FDS5680 | 功能描述:MOSFET SO-8 N-CH 60V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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| FDS5680_NL | 制造商:Fairchild Semiconductor Corporation 功能描述: |
| FDS5682 | 功能描述:MOSFET 60V N-CH. FET 20 MO SO8 TR RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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