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| 型号： | FDS6670AS |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 2/7页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 30V 13.5A 8SOIC |
| 产品培训模块： | High Voltage Switches for Power Processing |
| 产品变化通告： | Mold Compound Change 12/Dec/2007 |
| 标准包装： | 1 |
| 系列： | PowerTrench®, SyncFET™ |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 30V |
| 电流 - 连续漏极(Id) @ 25° C： | 13.5A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 9 毫欧 @ 13.5A，10V |
| Id 时的 Vgs(th)（最大）： | 3V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 38nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 1540pF @ 15V |
| 功率 - 最大： | 1W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-SOIC（0.154"，3.90mm 宽） |
| 供应商设备封装： | 8-SOICN |
| 包装： | 标准包装 |
| 其它名称： | FDS6670ASFSDKR |
Electrical Characteristics
T A = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max Units
Off Characteristics
BV DSS
' BV DSS
' T J
Drain–Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
V GS = 0 V, I D = 1 mA
I D = 1 0 mA, Referenced to 25 q C
30
27
V
mV/ q C
I DSS
I GSS
Zero Gate Voltage Drain Current
Gate–Body Leakage
V DS = 24 V,
V GS = r 20 V,
V GS = 0 V
V DS = 0 V
500
r 100
P A
nA
On Characteristics
(Note 2)
V GS(th)
' V GS(th)
' T J
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
V DS = V GS , I D = 1 mA
I D = 1 0 mA, Referenced to 25 q C
1
1.7
– 4
3
V
mV/ q C
R DS(on)
Static Drain–Source
On–Resistance
V GS = 10 V,
V GS = 4.5 V,
I D = 13.5 A
I D = 11.2 A
7.5
9
9
11.5
m :
V GS =10 V, I D =13.5A, T J =125 q C
10
12.5
I D(on)
g FS
On–State Drain Current
Forward Transconductance
V GS = 10 V,
V DS = 10 V,
V DS = 5 V
I D = 13.5 A
50
66
A
S
Dynamic Characteristics
C iss
C oss
C rss
R g
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
V DS = 15 V,
f = 1.0 MHz
V GS = 0 V,
1540
440
160
2.1
4.2
pF
pF
pF
:
Switching Characteristics
(Note 2)
t d(on)
Turn–On Delay Time
10
20
ns
t r
t d ( off )
t f
t d(on)
t r
t d ( off )
t f
Q g(TOT)
Q g
Turn–On Rise Time
Turn–Off Delay Time
Turn–Off Fall Time
Turn–On Delay Time
Turn–On Rise Time
Turn–Off Delay Time
Turn–Off Fall Time
Total Gate Charge at Vgs=10V
Total Gate Charge at Vgs=5V
V DS = 15 V,
V GS = 10 V,
V DS = 15 V,
V GS = 4.5 V,
V DD = 15 V,
I D = 1 A,
R GEN = 6 :
I D = 1 A,
R GEN = 6 :
I D = 13.5 A,
5
27
18
13
15
24
13
27
16
10
44
32
23
27
38
23
38
22
ns
ns
ns
ns
ns
ns
ns
nC
nC
Q gs
Q gd
Gate–Source Charge
Gate–Drain Charge
4.2
5.1
nC
nC
?2010 Fairchild Semiconductor Corporation
FDS6670AS Rev. C 1
2
www.fairchildsemi.com
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相关代理商/技术参数 |
参数描述 |
|---|---|
| FDS6670AS_08 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:30V N-Channel PowerTrench㈢ SyncFET⑩ |
| FDS6670AS_10 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:30V N-Channel PowerTrench SyncFETa?￠ |
| FDS6670AS_NL | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:30V N-Channel PowerTrench SyncFET |
| FDS6670S | 功能描述:MOSFET SO-8 RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDS6670S | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET N SO-8 |
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