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| 型号： | FDS6875 |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 2/5页 |
| 文件大小： | 0K |
| 描述： | MOSFET P-CH DUAL 20V 6A 8SOIC |
| 产品培训模块： | High Voltage Switches for Power Processing |
| 产品变化通告： | Mold Compound Change 12/Dec/2007 |
| 产品目录绘图： | Power MOSFET, 8-SOP, SO-8 |
| 标准包装： | 1 |
| 系列： | PowerTrench® |
| FET 型： | 2 个 P 沟道（双） |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 20V |
| 电流 - 连续漏极(Id) @ 25° C： | 6A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 30 毫欧 @ 6A，4.5V |
| Id 时的 Vgs(th)（最大）： | 1.5V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 31nC @ 5V |
| 输入电容 (Ciss) @ Vds： | 2250pF @ 10V |
| 功率 - 最大： | 900mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-SOIC（0.154"，3.90mm 宽） |
| 供应商设备封装： | 8-SOICN |
| 包装： | 标准包装 |
| 产品目录页面： | 1604 (CN2011-ZH PDF) |
| 其它名称： | FDS6875DKR |
Electrical Characteristics (T A = 25 O C unless otherwise noted )
Symbol
Parameter
Conditions
Min
Typ
Max
Units
OFF CHARACTERISTICS
I D = -250 μA, Referenced to 25 C
BV DSS
? BV DSS / ? T J
I DSS
I GSSF
I GSSR
Drain-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Zero Gate Voltage Drain Current
Gate - Body Leakage, Forward
Gate - Body Leakage, Reverse
V GS = 0 V, I D = -250 μA
V DS = -16 V, V GS = 0 V
V GS = 8 V, V DS = 0 V
V GS = -8 V, V DS = 0 V
o
T J = 55°C
-20
-21
-1
-10
100
-100
V
mV/ o C
μA
μA
nA
nA
ON CHARACTERISTICS
(Note 2)
V GS(th)
? V GS(th) / ? T J
R DS(ON)
Gate Threshold Voltage
Gate Threshold Voltage Temp. Coefficient
Static Drain-Source On-Resistance
V DS = V GS , I D = -250 μA
I D = 250 μA, Referenced to 25 o C
V GS = -4.5 V, I D = -6 A
-0.4
-0.8
2.8
0.024
-1.5
0.03
V
mV/ o C
?
V GS = -2.5 V, I D = -5.3 A
T J =125°C
0.033
0.032
0.048
0.04
I D(ON)
g FS
On-State Drain Current
Forward Transconductance
V GS = -4.5 V, V DS = -5 V
V DS = -4.5 V, I D = -6 A
-20
22
A
S
DYNAMIC CHARACTERISTICS
C iss
C oss
C rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V DS = -10 V, V GS = 0 V,
f = 1.0 MHz
2250
500
200
pF
pF
pF
SWITCHING CHARACTERISTICS
(Note 2)
t D(on)
t r
t D(off)
t f
Q g
Q gs
Q gd
Turn - On Delay Time
Turn - On Rise Time
Turn - Off Delay Time
Turn - Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V DS = -10 V, I D = -1 A
V GEN = -4.5 V, R GEN = 6 ?
V DS = -10 V, I D = -6 A,
V GS = -5 V
8
15
98
35
23
3.9
5.5
16
27
135
55
31
ns
ns
ns
ns
nC
nC
nC
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
I S
Maximum Continuous Drain-Source Diode Forward Current
-1.3
A
V SD
Drain-Source Diode Forward Voltage
V GS = 0 V, I S = -1.3 A
(Note 2)
-0.7
-1.2
V
Notes:
1. R θ JA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. R θ JC is guaranteed by
design while R θ CA is determined by the user's board design.
a. 78 O C/W on a 0.5 in 2
pad of 2oz copper.
b. 125 O C/W on a 0.02 in 2
pad of 2oz copper.
c. 135 O C/W on a 0.003 in 2
pad of 2oz copper.
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300μs, Duty Cycle < 2.0%.
FDS6875 Rev.C
相关PDF资料 |
PDF描述 |
|---|---|
| FDS6890A | MOSFET N-CH DUAL 20V 7.5A 8SOIC |
| FDS6892A | MOSFET N-CH DUAL 20V 7.5A 8SOIC |
| FDS6894AZ | MOSFET N-CH DUAL 20V 8A 8SOIC |
| FDS6898A_NF40 | MOSFET N-CH DUAL PWM OPT 8-SOIC |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| FDS6875 | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET DUAL PP SO-8 |
| FDS6890A | 功能描述:MOSFET SO-8 DUAL N-CH 20V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDS6890A | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET DUAL NN SO-8 |
| FDS6892 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:Dual N-Channel Logic Level PWM Optimized PowerTrench MOSFET |
| FDS6892A | 功能描述:MOSFET SO-8 RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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