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| 型号： | FDS6930B |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 2/5页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH DUAL 30V 5.5A 8-SOIC |
| 产品变化通告： | Mold Compound Change 12/Dec/2007 |
| 标准包装： | 1 |
| 系列： | PowerTrench® |
| FET 型： | 2 个 N 沟道（双） |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 30V |
| 电流 - 连续漏极(Id) @ 25° C： | 5.5A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 38 毫欧 @ 5.5A，10V |
| Id 时的 Vgs(th)（最大）： | 3V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 3.8nC @ 5V |
| 输入电容 (Ciss) @ Vds： | 412pF @ 15V |
| 功率 - 最大： | 900mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-SOIC（0.154"，3.90mm 宽） |
| 供应商设备封装： | 8-SOICN |
| 包装： | 标准包装 |
| 产品目录页面： | 1603 (CN2011-ZH PDF) |
| 其它名称： | FDS6930BDKR |
Electrical Characteristics T A = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BV DSS
? BV DSS
? T J
I DSS
I GSS
Drain–Source Breakdown Voltage
Breakdown Voltage Temperature
Coef?cient
Zero Gate Voltage Drain Current
Gate–Source Leakage
V GS = 0 V, I D = 250 μ A
I D = 250 μ A, Referenced to 25 ° C
V DS = 24 V, V GS = 0 V
V DS = 24 V, V GS = 0 V, T J = 55 ° C
V GS = ± 20 V, V DS = 0 V
30
26
1
10
± 100
V
mV/ ° C
μ A
nA
On Characteristics
(Note 2)
V GS(th)
? V GS(th)
? T J
R DS(on)
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coef?cient
Static Drain–Source
V DS = V GS , I D = 250 μ A
I D = 250 μ A, Referenced to 25 ° C
V GS = 10 V, I D = 5.5 A
1
1.9
–4.6
31
3
38
V
mV/ ° C
m ?
On–Resistance
V GS = 4.5 V, I D = 4.8 A
V GS = 10 V, I D = 5.5 A, T J = 125 ° C
40
45
50
62
I D(on)
g FS
On–State Drain Current
Forward Transconductance
V GS = 10 V, V DS = 5 V
V DS = 5 V, I D = 5.5 A
20
19
A
S
Dynamic Characteristics
C iss
C oss
C rss
R G
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
V DS = 15 V, V GS = 0 V,
f = 1.0 MHz
V GS = 15 mV, f = 1.0 MHz
310
90
40
1.9
412
120
60
pF
pF
pF
?
Switching Characteristics
(Note 2)
t d(on)
t r
t d(off)
t f
Q g
Q gs
Q gd
Turn–On Delay Time
Turn–On Rise Time
Turn–Off Delay Time
Turn–Off Fall Time
Total Gate Charge
Gate–Source Charge
Gate–Drain Charge
V DD = 15 V, I D = 1 A,
V GS = 10 V, R GEN = 6 ?
V DS = 15 V, I D = 5.5 A,
V GS = 5 V
6
6
16
2
2.7
1.0
0.7
12
12
28
4
3.8
ns
ns
ns
ns
nC
nC
nC
Drain–Source Diode Characteristics and Maximum Ratings
I S
Maximum Continuous Drain–Source Diode Forward Current
1.3
A
V SD
t rr
Q rr
Drain–Source Diode Forward Voltage
Diode Reverse Recovery Time (note3)
Diode Reverse Recovery Charge
V GS = 0 V, I S = 1.3 A (Note 2)
I F = 5.5 A, d iF /d t = 100 A/μs
0.8
16
6
1.2
32
V
nS
nC
Notes:
1. R θ JA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is de?ned as the solder mounting surface of the drain pins.
R θ JC is guaranteed by design while R θ CA is determined by the user's board design.
a) 78°C/W when mounted
on a 0.5 in 2 pad of 2 oz
copper
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300 μ s, Duty Cycle < 2.0%
3. Trr parameter will not be subjected to 100% production testing.
FDS6930B Rev. A1
2
b) 125°C/W when
mounted on a 0.02 in 2
pad of 2 oz copper
c) 135°C/W when
mounted on a
minimum pad.
www.fairchildsemi.com
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相关代理商/技术参数 |
参数描述 |
|---|---|
| FDS6930B | 制造商:Fairchild Semiconductor Corporation 功能描述:N CHANNEL MOSFET 30V ((NW)) 制造商:Fairchild Semiconductor Corporation 功能描述:N CHANNEL MOSFET, 30V, SOIC |
| FDS6930B_10 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:Dual N-Channel Logic Level PowerTrench?? MOSFET |
| FDS6961 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:Dual N-Channel Logic Level PowerTrenchTM MOSFET |
| FDS6961A | 功能描述:MOSFET SO-8 DUAL N-CH RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDS6961A | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET NN CH 30V 3.5A 8SOIC 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET, NN CH, 30V, 3.5A, 8SOIC 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET, NN CH, 30V, 3.5A, 8SOIC; Transistor Polarity:N Channel; Continuous Drain Current Id:3.5A; Drain Source Voltage Vds:30V; On Resistance Rds(on):90mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.8V; No. of Pins:8;RoHS Compliant: Yes |
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