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参数资料
| 型号： | FDS7296N3 |
| 厂商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分类： | JFETs |
| 英文描述： | 30V N-Channel PowerTrench MOSFET |
| 中文描述： | 15 A, 30 V, 0.008 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | FLMP, SO-8 |
| 文件页数： | 2/7页 |
| 文件大小： | 122K |
| 代理商： | FDS7296N3 |
FDS7296N3 Rev C(W)
Electrical Characteristics
T
A
= 25°C unless otherwise noted
Test Conditions
Symbol
Parameter
Min
Typ
Max
Units
Drain-Source Avalanche Ratings
W
DSS
Drain-Source Avalanche Energy
I
AR
Drain-Source Avalanche Current
Single Pulse, V
DD
= 27 V, I
D
=15 A
189
15
mJ
A
Off Characteristics
BV
DSS
Drain–Source Breakdown Voltage
BV
DSS
T
J
Coefficient
I
DSS
Zero Gate Voltage Drain Current
I
GSS
Gate–Body Leakage
V
GS
= 0 V,
I
D
= 250
μ
A
30
V
Breakdown Voltage Temperature
I
D
= 250
μ
A, Referenced to 25
°
C
28
mV/
°
C
V
DS
= 24 V,
V
GS
=
±
20 V, V
DS
= 0 V
V
GS
= 0 V
1
μ
A
nA
±
100
On Characteristics
V
GS(th)
Gate Threshold Voltage
V
GS(th)
T
J
Temperature Coefficient
R
DS(on)
Static Drain–Source
On–Resistance
(Note 2)
V
DS
= V
GS
,
I
D
= 250
μ
A, Referenced to 25
°
C
I
D
= 250
μ
A
1
1.8
3
V
Gate Threshold Voltage
–0.5
mV/
°
C
V
GS
= 10 V,
V
GS
= 4.5 V,
V
GS
= 10 V, I
D
= 15 A,T
J
= 125
°
C
V
DS
= 10 V, I
D
= 15 A
I
D
= 15 A
I
D
= 13 A
6.5
8.2
9.7
58
8
11
13
m
g
FS
Forward Transconductance
S
Dynamic Characteristics
C
iss
Input Capacitance
C
oss
Output Capacitance
C
rss
Reverse Transfer Capacitance
R
G
Gate Resistance
1540
430
140
1.0
pF
pF
pF
V
DS
= 15 V,
f = 1.0 MHz
V
GS
= 0 V,
V
GS
= 15 mV, f = 1.0 MHz
Switching Characteristics (Note 2)
t
d(on)
Turn–On Delay Time
t
r
Turn–On Rise Time
t
d(off)
Turn–Off Delay Time
t
f
Turn–Off Fall Time
Q
g
Total Gate Charge
Q
g
Total Gate Charge
Q
gs
Gate–Source Charge
Q
gd
Gate–Drain Charge
10
4
27
14
12.7
23
4.2
3.5
20
9
44
25
18
32
ns
ns
ns
ns
nC
nC
nC
nC
V
DD
= 15 V, I
D
= 1 A,
V
GS
= 10 V,
R
GEN
= 6
V
DS
= 15 V, I
D
= 15 A, V
GS
= 5 V
V
DS
= 15 V, I
D
= 15 A, V
GS
=10 V
Drain–Source Diode Characteristics and Maximum Ratings
I
S
Maximum Continuous Drain–Source Diode Forward Current
Drain–Source Diode Forward
Voltage
t
rr
Diode Reverse Recovery Time
Q
rr
Diode Reverse Recovery Charge
2.5
A
V
SD
V
GS
= 0 V,
I
S
= 2.5 A
(Note 2)
0.7
1.2
V
27
19
nS
nC
I
F
= 15 A,
d
iF
/d
t
= 100 A/μs
F
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